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SH8K4

产品描述4V Drive Nch+Nch MOSFET
文件大小163KB,共4页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
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SH8K4概述

4V Drive Nch+Nch MOSFET

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4V Drive Nch+Nch MOSFET
SH8K4
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Dimensions
(Unit : mm)
SOP8
Packaging
specifications
Package
Type
SH8K4
Code
Basic ordering unit (pieces)
Taping
TB
2500
Inner
circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute
maximum ratings
(Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw 10μs, Duty cycle 1%
∗2
MOUNTED ON A CERAMIC BOARD.
∗1
∗1
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
30
±20
±9.0
±36
1.6
6.4
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal
resistance
Parameter
Channel to ambient
∗MOUNTED
ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C
/ W
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A

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