JANSR2N7398
Formerly FSL430R4
June 1998
2A, 500V, 2.50 Ohm, Rad Hard,
N-Channel Power MOSFET
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications exposed
to radiation environments such as switching regulation,
switching converters, motor drives, relay drivers and drivers
for high-power bipolar switching transistors requiring high
speed and low gate drive power. This type can be operated
directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
BRAND
JANSR2N7398
Title
ANS
N73
b-
t
A,
0V,
0
m,
d
rd,
an-
wer
OS-
T)
utho
ey-
rds
ter-
rpo-
on,
mi-
n-
ctor,
,
0V,
0
m,
d
rd,
an-
wer
Features
• 2A, 500V, r
DS(ON)
= 2.50
Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 8.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
- for 3E12 Neutrons/cm
2
- Usable to 3E13 Neutrons/cm
2
Ordering Information
PART NUMBER
JANSR2N7398
PACKAGE
TO-205AF
Symbol
Die Family TA17639.
MIL-PRF-19500/631.
Package
TO-205AF
D
G
S
©2001 Fairchild Semiconductor Corporation
JANSR2N7398 Rev. A
JANSR2N7398
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JANSR2N7398
500
500
2
1
6
±
20
25
10
0.20
6
2
6
-55 to 150
300
1.0
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
g
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
Ω
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
µ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
500
-
1.5
0.5
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to
20V
V
GS
= 0V to
12V
V
GS
= 0V to 2V
V
DD
= 250V,
I
D
= 2A
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
1.80
-
-
-
-
-
-
28
-
4.7
13
-
-
MAX
-
5.0
4.0
-
25
250
100
200
5.25
2.50
4.80
80
100
150
140
52
35
2.1
6.7
16
5.0
175
UNITS
V
V
V
V
µ
A
µ
A
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 400V,
V
GS
= 0V
V
GS
=
±
20V
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 2A
I
D
= 1A,
V
GS
= 12V
T
C
= 25
o
C
T
C
= 125
o
C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on Slash Sheet)
Gate Charge at 12V
Threshold Gate Charge (Not on Slash Sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
R
θ
JC
R
θ
JA
V
DD
= 250V, I
D
= 2A,
R
L
= 125
Ω
, V
GS
= 12V,
R
GS
= 7.5
Ω
©2001 Fairchild Semiconductor Corporation
JANSR2N7398 Rev. A
JANSR2N7398
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 2A
I
SD
= 2A, dI
SD
/dt = 100A/
µ
s
MIN
0.6
-
TYP
-
-
MAX
1.8
390
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 400V
V
GS
= 12V, I
D
= 2A
V
GS
= 12V, I
D
= 1A
MIN
500
1.5
-
-
-
-
MAX
-
4.0
100
25
5.25
2.50
UNITS
V
V
nA
µA
V
Ω
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Ni
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
26
37
37
37
TYPICAL
RANGE (µ)
43
43
36
36
36
APPLIED
V
GS
BIAS
(V)
-15
-20
-5
-10
-15
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
500
450
500
400
100
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
Typical Performance Curves
600
500
400
V
DS
(V)
300
200
Unless Otherwise Specified
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LIMITING INDUCTANCE (HENRY)
1E-3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
100
TEMP = 25
o
C
0
0
-5
-10
V
GS
(V)
-15
-20
-25
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
JANSR2N7398 Rev. A
©2001 Fairchild Semiconductor Corporation
JANSR2N7398
Typical Performance Curves
2.5
Unless Otherwise Specified
(Continued)
30
10
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
2.0
I
D
, DRAIN (A)
100µs
1
1ms
10ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
1.5
1.0
0.5
0
-50
0
50
100
150
0.01
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING CURVE
2.5
PULSE DURATION = 250ms,V
GS
= 12V, I
D
= 1A
2.0
NORMALIZED r
DS(ON)
12V
Q
G
1.5
Q
GS
V
G
Q
GD
1.0
0.5
0.0
-80
CHARGE
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
NORMALIZED THERMAL RESPONSE (Z
θ
JC
)
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-4
10
-3
10
-2
10
-1
0.01
P
DM
t
1
10
0
t
2
10
1
0.001
10
-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
©2001 Fairchild Semiconductor Corporation
JANSR2N7398 Rev. A
JANSR2N7398
Typical Performance Curves
10
I
AS
, AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
5
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
1
0.001
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) /
(1.3 RATED BV
DSS
- V
DD
) + 1]
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
50Ω
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
JANSR2N7398 Rev. A
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