UMT3904 / SST3904 / MMST3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904
Features
1) BV
CEO
> 40V (I
C
= 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906.
Dimensions
(Unit : mm)
UMT3904
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3904
UMT3
R1A
T106
3000
SST3904 MMST3904
SST3
R1A
T116
3000
SMT3
R1A
T146
3000
SST3904
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
MMST3904
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
UMT3904,
SST3904,
MMST3904
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
40
6
0.2
0.2
0.35
150
−55
to +150
Unit
V
V
V
A
W
W
°C
°C
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
P
C
SST3904, MMST3904
Junction temperature
Storage temperature
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board.
∗
Tj
Tstg
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Min.
60
40
6
-
-
-
-
0.65
-
40
70
100
60
30
300
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.2
0.3
0.85
0.95
-
-
300
-
-
-
4
8
35
35
200
50
Unit
V
V
V
nA
nA
V
V
I
C
= 10µA
I
C
= 1mA
I
E
= 10µA
V
CB
= 30V
V
EB
= 3V
I
C
/I
B
= 10mA/1mA
I
C
/I
B
= 50mA/5mA
I
C
/I
B
= 10mA/1mA
I
C
/I
B
= 50mA/5mA
V
CE
= 1V , I
C
= 0.1mA
V
CE
= 1V , I
C
= 1mA
V
CE
= 1V , I
C
= 10mA
V
CE
= 1V , I
C
= 50mA
MHz
pF
pF
ns
ns
ns
ns
V
CE
= 1V , I
C
= 100mA
V
CE
= 20V , I
E
=
−10mA,
f = 100MHz
V
CB
= 10V , f = 100kHz
V
EB
= 0.5V , f = 100kHz
V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
V
CC
= 3V , I
C
= 10mA , I
B1
=
−I
B2
= 1mA
V
CC
= 3V , I
C
= 10mA , I
B1
=
−I
B2
= 1mA
Conditions
DC current transfer ratio
h
FE
~
-
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
Rev.B
1/4
UMT3904 / SST3904 / MMST3904
Transistors
500
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
Ta=25
°C
V
CE
=5V
f=1kHz
1.8
1.6
Ta=25
°C
I
C
/ I
B
=10
AC CURRENT GAIN : h
FE
100
1.2
0.8
0.4
10
5
0.01
0.1
1.0
COLLECTOR CURRENT : I
C
(
mA)
10
100
0
0.1
1.0
10
100
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 AC current gain vs. collector current
Fig.6 Base-emitter saturation
voltage vs. collector current
1.8
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
1.6
Ta=25
°C
V
CE
=5V
1000
Ta=25
°C
I
C
/ I
B
=10
1000
Ta=25°C
I
C
/ I
B
=10
TURN ON TIME : ton (
ns)
1.2
RISE TIME : t r (
ns)
V
CC
=40V
0.8
100
40V
15V
V
CC
=3V
100
0.4
0
0.1
1.0
10
100
COLLECTOR CURRENT : I
C
(
mA)
10
1.0
10
COLLECTOR CURRENT : I
C
(
mA)
100
10
1.0
10
100
COLLECTOR CURRENT : I
C
(
mA)
Fig.7 Grounded emitter propagation
characteristics
Fig.8 Turn-on time vs. collector
current
Fig.9 Rise time vs. collector
current
1000
Ta=25
°C
I
C
=10I
B1
=10I
B2
1000
Ta=25
°C
V
CC
=40V
I
C
/I
B
=10
CAPACITANCE (
pF)
50
Ta=25
°C
f=1MHz
STORAGE TIME : ts (
ns)
FALL TIME : tf (
ns)
10
Cib
Cob
40V
100
15V
V
CE
=3V
100
1
10
1.0
10
COLLECTOR CURRENT : I
C
(
mA)
100
10
1.0
10
100
COLLECTOR CURRENT : I
C
(
mA)
0.5
0.1
1.0
10
REVERSE BIAS VOLTAGE (
V)
100
Fig.10 Storage time vs. collector
current
Fig.11 Fall time vs. collector
current
Fig.12 Input / output capacitance
vs. voltage
Rev.B
3/4
UMT3904 / SST3904 / MMST3904
Transistors
CURRENT GAIN-BANDWIDTH PRODUCT : f
T
(
MHz)
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
h PARAMETER NORMALIZED TO 1mA
100
100MHz 200MHz
400MHz 500MHz
300 MHz
10
Ta=25
°C
1000
Ta=25
°C
V
CE
=5V
100
V
CE
=5V
f=270Hz
hoe
10
hie
100
hre
hfe
1.0
300MHz
200MHz
0.1
0.1
100MHz
1
1.0
10
100
COLLECTOR CURRENT : I
C
(
mA)
10
1.0
10
COLLECTOR CURRENT : I
C
(
mA)
100
0.1
0.1
Ta=25
°C
I
C
=1mA
hie=3.84kΩ
hfe=141
−
5
hre=5.03
×
10
hoe=5.58µS
1
10
100
COLLECTOR CURRENT : I
C
(
mA)
Fig.13 Gain bandwidth product
Fig.14 Gain bandwidth product
vs. collector current
Fig.15 h parameter vs. collector current
COLLECTOR CUTOFF CURRENT : I
CBO
(
A)
10µ
V
CB
=25V
100k
SOURCE RESISTANCE : R
S
(Ω)
SOURCE RESISTANCE : R
S
(Ω)
Ta=25
°C
V
CE
=5V
f=10kHz
100k
Ta=25
°C
V
CE
=5V
f=1kHz
12
dB
12
1µ
dB
B
8d
B
5d
B
3d
B
0d
1.
8d
B
10k
100n
3d
10k
B
5d
1.
0d
B
B
10n
1k
NF
=
1n
3.
5.
0d
B
1.
0
1k
dB
NF
=1
.0
dB
3.
0d
B
B
0d
B
5.
0d
8.
B
0d B
0d
8.
0.1n
0
25
50
75
100
125
150
ANBIENT TEMPERATURE : Ta (
°C)
100
0.01
0.1
1
COLLECTOR CURRENT : I
C
(
mA)
10
100
0.01
0.1
1
COLLECTOR CURRENT : I
C
(
mA)
10
Fig.16 Noise characteristics (
Ι
)
Fig.17 Noise characteristics (
ΙΙ
)
Fig.18 Noise characteristics (
ΙΙΙ
)
100k
SOURCE RESISTANCE : R
S
(Ω)
Ta=25
°C
V
CE
=5V
f=10Hz
12
10
NOISE FIGURE : NF (
dB)
Ta=25
°C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
dB
12
B
8d
B
5d
B
3d
10k
8
6
4
2
0
10
1k
NF
=3
5.
0d
.0
d
B
B
100
0.01
Fig.19 Noise characteristics (
ΙV
)
0
8.
dB
0.1
1
COLLECTOR CURRENT : I
C
(
mA)
10
100
1k
FREQUENCY : f (
Hz)
10k
100k
Fig.20 Noise vs. collector current
Rev.B
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
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It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0