UM6K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
UMT6
2.0
1.3
0.9
0.65
(5)
(6)
(4)
Features
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
0.65
0.7
1pin mark
(1)
(2)
(3)
1.25
2.1
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : K1
Applications
Interfacing, switching (30V, 100mA)
Packaging specifications
Package
Type
UM6K1N
Code
Basic ordering unit (pieces)
Taping
TN
3000
Inner circuit
(6)
(5)
Gate
Protection
Diode
0.1Min.
(4)
∗
Tr1
Tr2
(1)
Gate
Protection
Diode
∗
(2)
(3)
Absolute maximum ratings
(Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
With each pin mounted on the recommended lands.
(1)
(2)
(3)
(4)
(5)
(6)
Tr1
Tr1
Tr2
Tr2
Tr2
Tr1
Source
Gate
Drain
Source
Gate
Drain
∗
A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
P
D
∗2
Tch
Tstg
Limits
30
±20
±100
±400
150
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
With each pin mounted on the recommended lands.
Symbol
Rth(ch-a)
∗
Limits
833
1042
Unit
°C
/ W / TOTAL
°C
/ W / ELEMENT
Rev.B
1/3
UM6K1N
Transistors
Electrical characteristics
(Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
R
DS (on)
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Conditions
V
GS
=±20V, V
DS
=0V
I
D
= 10µA, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
DS
= 3V, I
D
= 100µA
I
D
= 10mA, V
GS
= 4V
I
D
= 1mA, V
GS
= 2.5V
I
D
= 10mA, V
DS
= 3V
V
DS
= 5V
V
GS
=0V
f=1MHz
V
DD
5V
I
D
= 10mA
V
GS
= 5V
R
L
=500Ω
R
G
=10Ω
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : V
GS
(th) (V)
0.15
4V
DRAIN CURRENT : I
D
(A)
200m
3V
DRAIN CURRENT : I
D
(A)
100m
50m
20m
10m
5m
2m
1m
0.5m
V
DS
=3V
Pulsed
2
V
DS
=3V
I
D
=0.1mA
3.5V
1.5
0.1
2.5V
1
0.05
2V
V
GS
=1.5V
Ta=125
°C
75
°C
25
°C
−25°C
0.5
0.2m
0
0
1
2
3
4
5
0.1m
0
1
2
3
4
0
−50 −25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch (
°C)
Fig.1 Typical Output Characteristics
Fig.2 Typical Transfer Characteristics
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
20
10
5
Ta=125
°C
75
°C
25
°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
20
10
5
Ta=125
°C
75
°C
25
°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
V
GS
=4V
Pulsed
50
V
GS
=2.5V
Pulsed
15
Ta=25
°C
Pulsed
10
2
1
0.5
0.001 0.002
2
1
0.5
0.001 0.002
5
I
D
=0.1A
I
D
=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( )
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( )
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
Rev.B
2/3
UM6K1N
Transistors
9
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
REVERCE DRAIN CURRENT : I
DR
(A)
8
7
6
5
4
3
2
1
0
−50 −25
0
25
50
75
I
D
=100mA
V
GS
=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : Yfs (S)
0.5
V
DS
=3V
Pulsed
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0.2
0.1
0.05
0.02
0.01
0.005
0.002
100 125
150
V
GS
=0V
Pulsed
I
D
=50mA
Ta=−25
°C
25
°C
75
°C
125
°C
Ta=125
°C
75
°C
25
°C
−25°C
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (
°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
Fig.8 Forward Transfer Admittance vs.
Drain Current
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage ( )
REVERCE DRAIN CURRENT : I
DR
(A)
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=4V
Ta=25
°C
Pulsed
50
20
CAPACITANCE : C (pF)
Ta=25
°C
f=1MH
Z
V
GS
=0V
Pulsed
1000
500
SWITHING TIME : t (ns)
t
f
t
d(off)
C
iss
10
5
200
100
50
20
10
5
2
0.1 0.2
Ta=25
°C
V
DD
=5V
V
GS
=5V
R
G
=10
Ω
0V
C
oss
C
rss
t
r
t
d(on)
2
1
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.5
0.1
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage ( )
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Switching Characteristics
Switching characteristics measurement circuit
Pulse Width
50%
10%
10%
90%
50%
V
GS
V
GS
I
D
D.U.T.
R
L
V
DS
R
G
V
DS
10%
90%
90%
t
d(off)
t
f
t
off
V
DD
t
d(on)
t
on
t
r
Fig.13
Switching Time Test Circuit
Fig.14
Switching Time Waveforms
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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