RTQ045N03
Transistors
2.5V Drive Nch MOS FET
RTQ045N03
Structure
Silicon N-channel
MOS FET
External dimensions
(Unit : mm)
TSMT6
1.0MAX
0.85
0.7
2.9
1.9
0.95 0.95
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6) .
(6)
(5)
(4)
1.6
2.8
0~0.1
(1)
(2)
(3)
1pin mark
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : QM
Application
Power switching, DC / DC converter.
Packaging specifications
Package
Type
RTQ045N03
Code
Basic ordering unit (pieces)
Taping
TR
3000
Equivalent circuit
(6)
(5)
(4)
(6)
(5)
(4)
∗2
0.3~0.6
∗1
(1)
(2)
(3)
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board.
(1)
(2)
(3)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
30
12
±4.5
±18
1.0
4.0
1.25
150
−55~+150
Unit
V
V
A
A
A
A
W
°C
°C
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
Parameter
Channel to ambient
∗
Mounted on a ceramic board.
Symbol
Rth (ch-a)
∗
Limits
100
Unit
°C
/ W
Rev.C
1/3
RTQ045N03
Transistors
Electrical characteristic curves
1000
1000
SWITCHING TIME : t (ns)
C
iss
CAPACITANCE : C (pF)
t
f
100
t
d (off)
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
V
DD
=15V
V
GS
=4.5V
R
G
=10Ω
Pulsed
Ta=25°C
4.5 V
DD
=15V
I
D
=4.5A
4
R
G
=10Ω
3.5 Pulsed
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
7
8
9
10
5
100
C
oss
C
rss
t
r
10
t
d (on)
Ta=25°C
f=1MHz
V
GS
=0V
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10
100
Ta=25°C
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=0V
Pulsed
1
SOURCE CURRENT : I
s
(A)
DRAIN CURRENT : I
D
(A)
1
I
D
=2.25A
0.1
50
I
D
=4.5A
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=2.5V
Pulsed
100
100
100
10
10
10
1
0.1
1
10
1
0.1
1
10
1
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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