RB751V-40
SCHOTTKY DIODES
FEATURES
* High current rectifier Schottky diode
* Low voltage,low inductance
* For power supply
SOD-323
MECHANICAL DATA
*
*
*
*
*
.014(.35)
.010(.25)
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.004 grams
.071(1.80)
.063(1.60)
.055(1.40)
.047(1.20)
.106(2.70)
.098(2.50)
.006(.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
O
.003(.08)
MAX.039(1.00)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
REF .019(0.46)
.004(.10)
.000(.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@T
A
=25 C unless otherwise noted)
O
RATINGS
Maximum Peak reverse voltage
Maximum DC reverse voltage
Maximum Peak Forward Surge Current
Mean rectifying current
Operating and Storage Temperature Range
o
SYMBOL
V
RM
V
R
I
FSM
I
O
T
J
,T
STG
RB751V-40
40
30
0.2
0.03
-40 ~ + 125
UNITS
Volts
Volts
Amps
Amps
O
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reverse voltage leakage current
Forward voltage
Diode Capacitance
(V
R
=30V)
(I
F
=1mA)
(V
R
=1V,f=1MHz)
SYMBOL
I
R
V
F
C
T
MIN.
-
-
-
TYP.
-
-
2
MAX.
0.5
0.37
-
UNITS
uA
V
pF
VC 2006-3
RATING AND CHARACTERISTICS CURVES ( RB751V-40 )
1000m
100m
IF.FORWARD CURRENT(A)
Typ.
pulse measurement
100u
10u
1u
100n
10n
1n
Ta=125 C
Ta=75 C
O
O
10m
T
a=
1m
100u
10u
1u
12
5
Ta=75 C
Ta=25 C
Ta=-25 C
O
O
C
O
O
IR.REVERSE CURRENT(A)
Ta=25 C
O
Ta=-25 C
O
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
35
Figure1 Forward characteristics
CT.CAPACITANCE BETWEEN TERMINALS(pF)
100
50
20
10
5
2
1
0
2
4
6
8
10
VF.FORWARD VOLTAGE (V)
Figure2 Reverse Characteristics
Ta=25 C
f=1MHz
O
VR.REVERSE VOLTAGE(V)
12
14
Figure3 Capacitance between terminals characteristics
VR.REVERSE VOLTAGE (V)
传感器
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