RB500V-40
SCHOTTKY DIODES
FEATURES
*
High current rectifier Schottky diode
*
Low voltage,low inductance
*
For power supply
SOD-323
MECHANICAL DATA
.014(.35)
.010(.25)
*
Case: Molded plastic
*
Epoxy: UL 94V-O rate flame retardant
*
Lead: MIL-STD-202E method 208C guaranteed
*
Mounting position: Any
*
Weight: 0.004 grams
.071(1.80)
.063(1.60)
.055(1.40)
.047(1.20)
.106(2.70)
.098(2.50)
.006(.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
O
.003(.08)
MAX.039(1.00)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
REF .019(0.46)
.004(.10)
.000(.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@T
A
=25 C unless otherwise noted)
O
RATINGS
Maximum Peak reverse voltage
Maximum DC reverse voltage
Maximum Peak Forward Surge Current
Mean rectifying current
Operating and Storage Temperature Range
o
SYMBOL
V
RM
V
R
I
FSM
I
O
T
J
,T
STG
RB500V-40
45
40
1
0.1
-40 to + 125
UNITS
Volts
Volts
Amps
Amps
O
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reverse voltage leakage current
Forward voltage
Diode Capacitance
(V
R
=10V)
(I
F
=10mA)
(V
R
=10V,f=1MHz)
SYMBOL
I
R
V
F
C
T
MIN.
-
-
-
TYP.
-
-
6
MAX.
1
0.45
-
UNITS
mA
V
pF
VC 2007-4
Note: "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
RATING AND CHARACTERISTICS CURVES ( RB500V-40 )
1000
IF. FORWARD CURRENT (mA)
IR. REVERSE CURRENT (mA)
10000
1000
100
10
1
0.1
25
O
C
125
O
C
100
10
12
5
C
O
75
O
C
25
O
C
-25
O
C
1
75
O
C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.01
0
10
20
30
40
CT. CAPACITANCE BETWEEN TERNINALS (pF)
100
Figure1 Forward characteristics
VF. FORWARD VOLTAGE (V)
Figure2 Reverse characteristics
VR. REVERSE VOLTAGE(V)
100
I
O.
CURRENT (mA)
5
10
15
20
25
30
35
80
60
40
20
10
1
0
0
Figure3 Capacitance between terminals characteristics Figure4 Derating curve(mounting on glass epoxy PCBs)
VR.REVERSE VOLTAGE (V)
0
25
50
75
100
125
TA.AMBIENT TEMPERATURE(
O
C)
FPGA/CPLD
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