MMBT4401
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
O
P
CM
:
0.3 W(Tamb=25 C)
* Collector current
I
CM:
0.6 A
Collector-base voltage
*
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to+150
O
C
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
SOT-23
COLLECTOR
3
0.055(1.40)
MECHANICAL DATA
*
*
*
*
*
2
EMITTER
0.006(0.15)
0.003(0.08)
0.047(1.20)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.019(2.00)
0.071(1.80)
1
3
0.110(2.80)
2
0.118(3.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted)
O
RATINGS
o
O
Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C
SYMBOL
P
D
T
J
T
STG
O
VALUE
300
150
-55 to +150
UNITS
mW
o
o
Max. Operating Temperature Range
Storage Temperature Range
C
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
SYMBOL
R
qJA
MIN.
-
TYP.
-
MAX.
417
UNITS
o
C/W
2007-5
ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (I C = 1.0 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 0.1uAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 0.1uAdc, I C = 0)
Base Cutoff Current (V CE = 35Vdc, V BE(off) = 0.4Vdc)
Collector Cutoff Current (V CE = 35Vdc, V EB = 0.4Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
40
60
6.0
-
-
-
-
-
0.1
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc)
(I C = 1.0mAdc, V CE = 1.0Vdc)
(I C = 10mAdc, V CE = 1.0Vdc)
(I C = 150mAdc, V CE = 1.0Vdc)
(I C = 500mAdc, V CE = 2.0Vdc)
Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
VCE(sat)
hFE
20
40
80
100
40
-
-
0.75
-
-
-
-
300
-
0.4
0.75
0.95
1.2
Vdc
-
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz)
Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz)
Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz)
Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
fT
Ccb
Ceb
hie
hre
hfe
hoe
250
-
-
1.0
0.1
40
1.0
-
6.5
30
15
8.0
500
30
MHz
pF
pF
kohms
X 10 -
4
-
umhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc)
td
tr
ts
tf
-
-
-
-
15
20
225
30
ns
ns
(V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc)
<
Note : Pulse Test: Pulse Width-300ms,Duty Cycle<2.0%
-
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