TECHNICAL SPECIFICATION
SEMICONDUCTOR
RECTRON
MMBT2907LT1
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
P
CM
0.3 W(Tamb=25
O
C)
* Collector current
I
CM
-0.6 A
Collector-base voltage
*
V
(BR)CBO
: -60 V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
Cto+150
O
C
SOT-23
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.037(0.950)TYP
0.006(0.150)
0.003(0.080)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.020(0.50)
0.012(0.30)
0.100(2.550)
0.089(2.250)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
0.019(2.00)
0.071(1.80)
0.118(3.000)
0.110(2.800)
Dimensions in inches and (millimeters)
RATINGS
Zener Current ( see Table "Characteristics" )
o
O
Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C
SYMBOL
-
P
D
T
J
T
STG
VALUE
-
300
-55 to +150
-55 to +150
UNITS
-
mW
o
o
Max. Operating Temperature Range
Storage Temperature Range
C
C
ELECTRICAL CHARACTERISTICS ( At T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Max. Instantaneous Forward Voltage at I
F=
10mA
NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
SYMBOL
R
θJA
V
F
MIN.
-
-
TYP.
-
-
MAX.
417
-
UNITS
o
o
C/W
Volts
2006-3
ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) (I C = -10 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = -10µAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = -10µAdc, I C = 0)
Collector Cutoff Current (V CE = -30Vdc, V BE(off) = -5.0Vdc)
Collector Cutoff Current (V CB = -50Vdc, I E = 0)
(V CB = -50Vdc, I E = 0, TA= 125 C)
Base Current (V CE = -30Vdc, V EB(off) = -0.5Vdc)
O
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IB
-40
-60
-5.0
-
-
-
-
-
-
-
-50
-0.02
-20
-50
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (I C = -0.1mAdc, V CE = -10Vdc)
(I C = -1.0mAdc, V CE = -10Vdc)
(I C = -10mAdc, V CE = -10Vdc)
(I C = -150mAdc, V CE = -10Vdc)(2)
(I C = -500mAdc, V CE = -10Vdc)(2)
Collector-Emitter Saturation Voltage (2) (I C = -150mAdc, I B = -15mAdc)
(I C = -500mAdc, I B = -50mAdc)
Base-Emitter Saturation Voltage (2) (I C = -150mAdc, I B = -15mAdc)
(I C = -500mAdc, I B = -50mAdc)
VCE(sat)
hFE
35
50
75
-
30
-
-
-
-
-
-
-
-
-
-0.4
Vdc
-1.6
-1.3
Vdc
-2.6
-
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2)(3) (I C = -50mAdc, V CE = -20Vdc, f= 100MHz)
Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz)
Input Impedance (V EB = -2.0Vdc, I C = 0, f= 1.0MHz)
fT
Cobo
Cibo
200
-
-
-
8.0
30
MHz
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
<
<
NOTES : 2. Pulse Test: Pulse Width-300µs,Duty Cycle-2.0%
3. f
T
is defined as the frequency at which |hfe| extrapolates to unity
(V CC = -6.0Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc)
(V CC = -30Vdc ,I C = -150mAdc, I B1 = -15mAdc)
ton
td
tr
toff
ts
tf
-
-
-
-
-
-
45
10
40
100
80
30
ns
ns
RECTRON
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