The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 16 July 2004.
INCH-POUND
MIL-PRF-19500/616B
16 April 2004
SUPERSEDING
MIL-PRF-19500/616A
20 October 1997
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,
COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659
AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, dual high voltage, ultrafast
power rectifier diodes. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254AA isolated).
* 1.3 Maximum ratings. (per leg)
Types
V
RWM
I
FSM
(1)
t
p
= 8.3 ms
I
F
T
C
= 100
°
C
(1) (2) (3)
t
rr
(1)
R
θ
JC
(1)
R
θ
JA
(1)
T
STG
and T
J
V dc
1N6657, 1N6657R
1N6658, 1N6658R
1N6659, 1N6659R
100
150
200
A (pk)
A dc
ns
°
C/W
°
C/W
°
C
150
15
35
2.3
40
-65 to +200
(1) Each individual diode.
(2) Derate linearly at 300 mA/
°
C from +100
°
C to +150
°
C.
(3) Total package current is limited to 30A dc.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/616B
Dimensions
Ltr
Inches
Min
BL
CH
LD
LL
LO
LS
MHD
MHO
TL
TT
SCHEMATIC
1N6657, 1N6658, 1N6659
TERM 1 = ANODE 1
TERM 2 = CATHODE
TERM 3 = ANODE 2
TW
.535
.249
.035
.530
Max
.545
.260
.045
.550
Millimeters
Min
13.59
6.32
0.89
13.46
Max
13.89
6.60
1.43
13.97
.150 BSC
.150 BSC
.139
.665
.790
.040
.535
.149
.685
.800
.050
.545
3.81 BSC
3.81 BSC
3.53
16.89
20.07
1.02
13.59
3.78
17.40
20.32
1.27
13.89
1N6657R, 1N6658R, 1N6659R
TERM 1 = CATHODE 1
TERM 2 = ANODE
TERM 3 = CATHODE 2
* NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. All terminals are isolated from case.
4. In accordance with ASME Y14.5M, diameters are equivalent to
φ
x symbology.
FIGURE 1. Dimensions and configuration (TO-254AA).
2
MIL-PRF-19500/616B
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil.or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA
19111-5094.)
* 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
* 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminal feed
throughs shall employ materials that contain a minimum of 90 percent AL
2
O
3
(ceramic). Examples of such
construction techniques are metallized ceramic eyelets or ceramic walled packages. The US Government's
preferred system of measurement is the metric SI system. However, since this item was originally designed using
inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound
units shall take precedence.
3
MIL-PRF-19500/616B
3.4.1 Lead formation and finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and
herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see
6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in
accordance with screen 14 of MIL-PRF-19500.
3.4.2 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3 and table I herein.
* 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see 4.3).
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification (see 4.4.4 herein).
4
MIL-PRF-19500/616B
* 4.3 Screening ( JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with appendix E,
table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with
table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
appendix E,
table IV of
MIL-PRF-19500
1a
1b
2
3a
3b
(1) 3c
4, 5, 6
7a
7b
8
9
10
11
12
Measurement
JANS level
Required
Required
Not required
Required
Surge (see 4.3.1).
Thermal impedance (see 4.3.2)
Not applicable
Optional
Optional
Required
Not applicable
Not applicable
V
F1
and I
R1
Method 1038 of MIL-STD-750, test condition
B; t = 240 hours; (see 4.3.3)
Subgroup 2 and 3 of table I herein;
V
F1
and I
R1
;
∆
V
F1
=
±
0.1 V (pk);
∆
I
R1
=
±
2
µ
A dc or 100 percent from
the initial value; whichever is greater.
Not applicable
Required
Required
Required
JANTX and JANTXV levels
Not required
Required (JANTXV only)
Not required
Required
Surge (see 4.3.1)
Thermal impedance (see 4.3.2)
Not applicable
Optional
Optional
Not applicable
Not applicable
Not applicable
V
F1
and I
R1
Method 1038 of MIL-STD-750, test condition
A; t = 48 hours;
V
R
= 80 percent of rated V
R
.
Subgroup 2 of table I herein;
V
F1
and I
R1
;
∆
V
F1
=
±
0.1 V (pk);
∆
I
R1
=
±
2
µ
A dc or 100 percent from
the initial value; whichever is greater.
Not applicable
Required
Not required
Not required
13
14a
14b
15
16
(1) Thermal impedance shall be performed any time after screen 3.
* 4.3.1 Surge current. Surge current, method 4066 of MIL-STD-750. I
O
= 0; V
RM
(w) = 0; I
FSM
= see 1.3; six surges;
T
A
= 25
°
C, t
p
= 8.3 ms, one minute minimum time between surges. One surge only
4.3.2 Thermal impedance Z
θ
JX
measurements for screening. The Z
θ
JX
measurements shall be performed in
accordance with method 3101 of MIL-STD-750. The maximum limit (not to exceed the table I, subgroup 2 limit) for
Z
θ
JX
in screening (appendix E, table II of MIL-PRF-19500) shall be derived by each vendor by means of statistical
process control. When the process has exhibited control and capability, the capability data shall be used to
establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future
sealing lots using a random five piece sample from each lot to be plotted on the applicable X bar R chart. If a lot
exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation
and disposition.
5
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