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DTA114YM

产品描述100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
产品类别半导体    分立半导体   
文件大小136KB,共3页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
下载文档 详细参数 选型对比 全文预览

DTA114YM概述

100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

100 mA, 50 V, PNP, 硅, 小信号晶体管

DTA114YM规格参数

参数名称属性值
端子数量3
晶体管极性PNP
最大集电极电流0.1000 A
最大集电极发射极电压50 V
加工封装描述ROHS COMPLIANT, PLASTIC PACKAGE-3
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子涂层MATTE TIN
端子位置DUAL
包装材料PLASTIC/EPOXY
结构SINGLE WITH BUILT-IN RESISTOR
元件数量1
晶体管应用SWITCHING
晶体管元件材料SILICON
最大环境功耗0.2000 W
晶体管类型GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数68
额定交叉频率250 MHz

文档预览

下载PDF文档
-100mA / -50V Digital transistors
(with built-in resistors)
DTA114YM / DTA114YE / DTA114YUA / DTA114YKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTA114YM
1.2
0.32
(3)
DTA114YE
0.2
1.6
0.3
(3)
0.7
0.55
0.8
1.2
0.8
0.13
0.5
(2)
(1)
0.2
0.22
(1)(2)
1.6
0.1Min.
0.4 0.4
0.8
(1) IN
(2) GND
(3) OUT
0.2
0.5 0.5
1.0
0.2
0.15
(1) GND
(2) IN
(3) OUT
ROHM : VMT3
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 54
ROHM : EMT3
Abbreviated symbol : 54
2.9
0.4
(3)
DTA114YUA
2.0
0.3
(3)
0.9
0.2
0.7
DTA114YKA
1.1
0.8
1.25
2.1
(2)
(1)
0.1Min.
0.65 0.65
1.3
0.15
(1) GND
(2) IN
(3) OUT
ROHM : SMT3
EIAJ : SC-59
(2)
(1)
1.6
2.8
0.95 0.95
0.15
1.9
ROHM : UMT3
EIAJ : SC-70
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 54
Abbreviated symbol : 54
Packaging specifications
Package
Packaging type
Code
Basic ordering
unit (pieces)
VMT3
EMT3
UMT3
SMT3
Inner circuit
Taping
TL
3000
Taping
T2L
8000
Taping
T106
3000
Taping
R
1
OUT
T146
3000
IN
R
2
GND(
+
)
Type
DTA114YM
DTA114YE
DTA114YUA
DTA114YKA
IN
GND(
+
)
OUT
R
1
=10k
Ω
, R
2
=47k
Ω
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
0.3Min.
1/2
2009.06 - Rev.B

DTA114YM相似产品对比

DTA114YM DTA114YE_09 DTA114YKA DTA114YE DTA114YUA
描述 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
端子数量 3 3 3 3 3
表面贴装 Yes Yes YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
元件数量 1 1 1 1 1
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
是否无铅 - - 不含铅 不含铅 不含铅
是否Rohs认证 - - 符合 符合 符合
厂商名称 - - ROHM(罗姆半导体) ROHM(罗姆半导体) ROHM(罗姆半导体)
包装说明 - - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code - - compli compli compli
ECCN代码 - - EAR99 EAR99 EAR99
其他特性 - - DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC) - - 0.07 A 0.07 A 0.07 A
集电极-发射极最大电压 - - 50 V 50 V 50 V
配置 - - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) - - 68 68 68
JESD-30 代码 - - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 - - e1 e1 e1
封装主体材料 - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - - 260 260 260
极性/信道类型 - - PNP PNP PNP
最大功率耗散 (Abs) - - 0.2 W 0.15 W 0.2 W
认证状态 - - Not Qualified Not Qualified Not Qualified
端子面层 - - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
处于峰值回流温度下的最长时间 - - 10 10 10

 
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