EMZ8 / UMZ8N
Transistors
Power management (dual transistors)
EMZ8 / UMZ8N
Feature
1) Both a 2SA2018 chip and 2SC2412K chip in a EMT
or UMT package.
Dimensions(Unit
: mm)
EMZ8
(6) (5) (4)
Equivalent circuits
(1) (2) (3)
ROHM : EMT6
EIAJ :
(3)
(2)
(1)
Each lead has same dimensions
UMZ8N
Tr
2
Tr
1
(6) (5) (4)
(4)
(5)
(6)
(1) (2) (3)
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
Tr1
−15
−12
−6
−500
−1
150
−55
to +150
Tr2
60
50
7
150
−
Unit
V
V
V
mA
A
mW
°C
°C
150 (TOTAL)
∗
∗
120mW per element must not be exceeded.
Package, marking, and packaging specifications
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
EMZ8
EMT6
Z8
T2R
8000
UMZ8N
UMT6
Z8
TR
3000
Rev.C
1/4
EMZ8 / UMZ8N
Transistors
Electrical characteristics
(Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−0.1
−
260
6.5
Max.
−
−
−
−0.1
−0.1
−0.25
680
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
IC =
−10µA
IC =
−1mA
IE =
−10µA
VCB =
−15V
VEB =
−6V
IC/IB =
−200mA/−10mA
VCE =
−2V
, IC =
−10mA
VCE =
−2V
, IE = 10mA , f = 100MHz
VCB =
−10V
, IE = 0A , f = 1MHz
Conditions
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
7
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
0.4
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
= 50µA
I
C
= 1mA
I
E
= 50µA
V
CB
= 60V
V
EB
= 7V
I
C
/I
B
= 50mA/5mA
V
CE
= 6V , I
C
= 1mA
V
CE
= 12V , I
E
=
−2mA
, f = 100MHz
V
CB
= 12V , I
E
= 0A , f = 1MHz
Conditions
Electrical characteristic curves
<Tr1>
1000
V
CE
=2V
200
I
B
=700µA
1000
I
B
=600µA
I
B
=500µA
I
B
=400µA
I
B
=300µA
I
B
=200µA
V
CE
=2V
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
500
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
Ta=125°C
Ta=25°C
Ta=
−40°C
180
160
140
120
100
80
60
40
20
0
I
B
=100µA
I
B
=0µA
500
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
Ta=125°C
Ta=25°C
Ta=
−40°C
Ta=25
°C
pulsed
BASE TO EMITTER VOLTAGE : V
BE
(V)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
I
C
/ I
B
=20
Fig.2 Typical Output Characteristics
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
1000
500
10000
5000
2000
1000
500
200
100
50
20
10
1
2
Fig.3 DC Current Gain vs.
Collector Current
I
C
/ I
B
=20
Ta=
−40°C
Ta=25°C
Ta=125°C
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
Ta=125°C
Ta=25°C
Ta=
−40°C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
I
C
/ I
B
=50
I
C
/ I
B
=20
I
C
/ I
B
=10
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current
(Ι)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current
(ΙΙ)
Fig.6 Base-Emitter Saturation
Voltage vs.Collecter Current
Rev.C
2/4
EMZ8 / UMZ8N
Transistors
EMITTER INPUT CAPACITANCE :
Cib (pF)
COLLECTOR OUTPUT CAPACITANCE :
Cob (pF)
1000
TRANSITION FREQUENCY : f
T
(MHz)
500
200
100
50
20
10
5
2
1
1
2
5
10 20
V
CE
=2V
Ta=25°C
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
Cob
Cib
I
E
=0A
f=1MHz
Ta=25°C
50 100 200
500 1000
10 20
50 100
EMITTER CURRENT : I
C
(mA)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Gain Bandwidth Product vs.
Emitter Current
Fig.8 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
<Tr2>
50
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
100
0.50mA
mA
0.45
A
.40m
0
0.35mA
0.30mA
60
0.25mA
0.20mA
40
0.15mA
0.10mA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
10
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
Ta=25°C
30µA
27µA
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100°C
25
°C
−5
5°C
80
8
24µA
21µA
6
18µA
15µA
2
1
0.5
0.2
0.1
0
4
12µA
9µA
2
6µA
3µA
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Ta=25°C
Fig.2
Grounded emitter output
characteristics (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=100°C
V
CE
=5V
Fig.3
Grounded emitter output
characteristics (
ΙΙ
)
Ta=25°C
500
500
0.5
DC CURRENT GAIN : h
FE
200
V
CE
=5V
3V
1V
DC CURRENT GAIN : h
FE
200
25°C
−55°C
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.C
3/4
EMZ8 / UMZ8N
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=50
TRANSITION FREQUENCY : f
T
(MHz)
0.5
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=10
0.5
500
Ta=25°C
V
CE
=6V
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
0.05
0.1
0.05
Ta=100°C
25°C
−55°C
200
0.02
100
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100
0.01
0.2
0.5 1
2
5
10
20
50 100 200
50
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
Ι
)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
Fig.9 Gain bandwidth product vs.
emitter current
20
10
Cib
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25°C
f=32MH
Z
V
CB
=6V
100
5
50
2
Co
20
b
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.11 Base-collector time constant
vs. emitter current
Rev.C
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM
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2008 ROHM CO.,LTD.
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