–
TE
LNE150
SOLE
– OB
Preliminary
N-Channel Enhancement-Mode
DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
500V
R
DS(ON)
(max)
1.0KΩ
I
D(ON)
(min)
3.0mA
Order Number / Package
TO-236AB*
LNE150K1
Die
LNE150ND
Product marking for TO-236AB:
NEE❋
where
❋
= 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
7
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Advanced DMOS Technology
This low threshold Enhancement-mode (normally-off) transistor
utilizes an advanced DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s DMOS FETs are ideally suited to a wide range of
switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
Logic level interface - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drive
Analog switches
General purpose line drivers
Telecom switches
Source
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
BV
DSS
BV
DGS
-0.7V to +10V
-55°C to +150°C
300°C
Gate
Drain
TO-236AB
(SOT-23)
top view
7-21
LNE150
Thermal Characteristics
Package
TO-236AB
I
D
(continuous)*
3mA
I
D
(pulsed)
20mA
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
200
θ
a
°
C/W
350
I
DR
3mA
I
DRM
20mA
*
I
D
(continuous) is limited by max rated T
j
.
–O
Electrical Characteristics
Symbol
BV
DSS
BV
GSS
V
SG
I
SG
V
GS(TH)
∆V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
C
ISS
C
OSS
C
RSS
t
ON
t
OFF
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(TH)
with Temperature
Gate Body Leakage Current
Zero Gate Voltage Drain Current
ON-State Drain Current
TE –
OLE
BS
Min
500
10
0.7
3
0.6
2.5
-4.5
50
100
3
1.0
1.1
12
2
0.8
10
10
1.8
V
ns
V
GS
= 0V to 5V, R
GEN
= 100Ω,
V
DD
= 1.0V, R
load
= 200Ω
V
GS
= 0V, I
SD
= 3.0mA
pF
Typ
Max
Unit
V
V
V
mA
V
mV/°C
nA
nA
mA
KΩ
%/°C
Conditions
V
GS
= 0V, I
D
= 100µA
I
GS
= 100µA
I
SG
= 100µA
V
DS
= 0V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= +5.0V, V
DS
= 0V
V
GS
=0V, V
DS
= 500V
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 5.0V, I
D
= 500µA
V
GS
= 0V, I
D
= 500µA
V
GS
= 0V, V
DS
= 25V,
f=1.0MHz
(@ 25°C unless otherwise specified)
Gate-to-Source Diode Breakdown Voltage
Source-to-Gate diode Forward Voltage Drop
Source-to-Gate Continuous Diode Current
Static Drain-to-Source ON-State Resistance
Change in R
DS(ON)
with Temperature
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Diode forward Voltage Drop
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
V
DD
5V
90%
INPUT
0V
R
L
PULSE
GENERATOR
R
gen
OUTPUT
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
D.U.T.
10%
10%
INPUT
OUTPUT
0V
90%
90%
7-22
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