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DTD513ZE

产品描述500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
文件大小173KB,共3页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
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DTD513ZE概述

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

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500mA / 12V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD513ZE / DTD513ZM
Applications
Inverter, Interface, Driver
Dimensions
(Unit : mm)
DTD513ZE
1.6
0.3
0.7
0.55
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of
almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
(3)
0.8
(2)
(1)
1.6
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
0.13
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : Y21
DTD513ZM
0.2
0.8
1.2
1.2
0.32
(3)
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
0.4 0.4
0.8
0.2
0.22
(1)(2)
0.5
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : Y21
Packaging specifications
Package
Packaging type
Code
Part No.
DTD513ZE
DTD513ZM
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
R
1
IN
OUT
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTD513ZE DTD513ZM
12
−5
to
+10
500
150
150
−55
to
+150
V
V
mA
mW
C
C
IN
R
2
GND
OUT
GND
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=1.0kΩ / R
2
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.05 - Rev.B

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