100mA / 50V Digital transistors
(with built-in resistors)
DTC124GUA / DTC124GKA
Applications
Inverter, Interface, Driver
Features
1)The built-in bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic effects
are almost completely eliminated.
2)Only the on / off conditions need to be set for operation, making the
device design easy.
3)Higher mounting densities can be achieved.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Part No.
UMT3
SMT3
(2)
Dimensions
(Unit : mm)
DTC124GUA
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
2.1
0.1Min.
0.3Min.
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : K25
DTC124GKA
2.9
0.4
(3)
1.1
0.8
(1)
1.6
2.8
Taping
T106
3000
Taping
T146
3000
−
ROHM : SMT3
EIAJ : SC-59
0.95 0.95
0.15
1.9
(1) GND
(2) IN
(3) OUT
Basic ordering unit (pieces)
Abbreviated symbol : K25
DTC124GUA
DTC124GKA
−
Absolute maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
50
50
5
100
200
150
−55
to +150
Unit
V
V
V
mA
mW
°C
°C
Inner circuit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
C
B
R
E
E : Emitter
C : Collector
B : Base
R=22kΩ
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C
DTC124GUA / DTC124GKA
Electrical characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗
Characteristics of built-in transistor
Data Sheet
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
f
T
∗
Min.
50
50
5
−
140
−
56
15.4
−
Typ.
−
−
−
−
−
−
−
22
250
Max.
−
−
−
0.5
260
0.3
−
28.6
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=50μA
I
C
=1mA
I
E
=330μA
V
CB
=50V
V
EB
=4V
Conditions
I
C
=10mA,
I
B
=0.5mA
I
C
=5mA,
V
CE
=5V
−
V
CE
=10V,
I
E
= −5mA,
f=100MHz
Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : V
CE
(
sat
) (V)
1k
500
Ta=25°C
V
CE
=5V
Ta=100°C
1
500m
I
C
/I
B
=20/1
Ta=100°C
DC CURRENT GAIN : h
FE
200
100
Ta= 40°C
200m
100m
50m
Ta=25°C
50
20
10
5
2
1
100∝ 200∝ 500∝ 1m
2m
5m
10m 20m
50m 100m
Ta= 40°C
20m
10m
5m
2m
1m
100∝ 200∝ 500∝ 1m
2m
5m
10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. Collector current
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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