100mA / 50V Digital transistors
(with built-in resistors)
DTC114TM / DTC114TE / DTC114TUA / DTC114TKA
z
Applications
Inverter, Interface, Driver
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Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
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Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
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Dimensions
(Unit : mm)
DTC114TM
0.2
DTC114TE
1.2
0.32
(3)
1.6
0.3
( 3)
0.7
0.55
0.8
( 2)
(1)
0.4 0.4
0.13
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
0.8
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
0.2
0.22
(1)(2)
0.8
1.2
1.6
ROHM : EMT3
1.0
Abbreviated symbol : 04
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 04
DTC114TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTC114TKA
2.9
0.4
(3)
1.1
0.8
1.25
2.1
(2)
(1)
0.3Min.
0.65 0.65
0.1Min.
(2)
(1)
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
0.95 0.95
0.15
Each lead has same dimensions
Abbreviated symbol : 04
ROHM : SMT3
EIAJ : SC-59
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 04
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Inner circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
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c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C
DTC114TM / DTC114TE / DTC114TUA / DTC114TKA
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Packaging specifications
Package
Package type
Code
Basic ordering
unit (pieces)
Data Sheet
VMT3
Taping
EMT3
Taping
UMT3
Taping
SMT3
Taping
T2L
8000
TL
3000
−
T106
3000
−
−
T146
3000
−
−
−
Part No.
DTC114TM
DTC114TE
DTC114TUA
DTC114TKA
−
−
−
−
−
−
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Absolute maximum ratings
(Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
150
150
−55
to
+150
Limits
DTA114TM DTA114TE DTA114TUA DTA114TKA
50
50
5
100
200
V
V
V
mA
mW
°C
°C
Unit
z
Electrical characteristics
(Ta=25qC)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Min.
50
50
5
−
−
−
100
7
Typ.
−
−
−
−
−
−
250
10
250
Max.
−
−
−
0.5
0.5
0.3
600
13
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=50V
V
EB
=4V
Conditions
I
C
/I
B
=10mA/1mA
V
CE
=5V,
I
C
=1mA
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
∗
−
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Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1k
500
DC CURRENT GAIN : h
FE
V
CE
=
5V
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
Ta=100°C
25°C
−40°C
l
C
/l
B
=10
200
100
50
20
10
5
2
1
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
Ta=100°C
25°C
−40°C
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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c
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
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The Products specified in this document are intended to be used with general-use electronic
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