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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
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12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.7 dB TYP., G
a
= 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
NE350184C-T1
NE350184C-T1A
Order Number
NE350184C-T1-A
NE350184C-T1A-A
Package
84C (Pb-Free)
Quantity
1 kpcs/reel
5 kpcs/reel
Marking
A
Supplying Form
• 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4
−3
I
DSS
80
165
+150
−65
to +150
Unit
V
V
mA
µ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2003, 2005
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