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NE685M03-T1-A

产品描述TRANSISTOR,BJT,NPN,5V V(BR)CEO,30MA I(C),SOT-416VAR
产品类别分立半导体    晶体管   
文件大小205KB,共4页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准
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NE685M03-T1-A概述

TRANSISTOR,BJT,NPN,5V V(BR)CEO,30MA I(C),SOT-416VAR

NE685M03-T1-A规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Renesas(瑞萨电子)
Reach Compliance Codecompliant
最大集电极电流 (IC)0.03 A
配置Single
最小直流电流增益 (hFE)75
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)0.125 W
表面贴装YES

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NPN SILICON TRANSISTOR NE685M03
FEATURES
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 12 GHz
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
TK
3
1.4 ±0.1
0.45
(0.9)
0.45
1
0.2±0.1
0.3±0.1
DESCRIPTION
The NEC's NE685M03 transistor is designed for low noise,
high gain, and low cost requirements. This high f
T
part is well
suited for very low voltage/low current designs for portable
wireless communications and cellular radio applications. NEC's
new low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
µs,
duty cycle
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
µA
µA
pF
0.4
7
75
MIN
NE685M03
2SC5435
M03
TYP
12
1.5
9
140
0.1
0.1
0.7
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
California Eastern Laboratories

 
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