The NEC's NE685M03 transistor is designed for low noise,
high gain, and low cost requirements. This high f
T
part is well
suited for very low voltage/low current designs for portable
wireless communications and cellular radio applications. NEC's
new low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
µA
µA
pF
0.4
7
75
MIN
NE685M03
2SC5435
M03
TYP
12
1.5
9
140
0.1
0.1
0.7
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
California Eastern Laboratories
NE685M03
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9
5
2
30
125
150
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
26
150
D.C. FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
DC Forward Current Gain, h
FE
Collector Current, I
C
(mA)
140
22
18
14
10
6
2
0
130
120
110
100
1.0
2.0
3.0
4.0
5.0
6.0
0
6
12
18
24
30
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
ORDERING INFORMATION
PART NUMBER
NE685M03-A
NE685M03-T1-A
QUANTITY
NE685M03
SCHEMATIC
C
CBPKG
C
CB
L
CX
L
BX
Base
L
B
C
CE
Collector
Q1
L
E
C
CEPKG
L
EX
Emitter
BJT NONLINEAR MODEL PARAMETERS
(1)
Parameters
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RE
RB
RBM
IRB
RC
CJE
VJE
MJE
CJC
VJC
Q1
8.98e-17
107.1
0.99
22
0.55
1e-6
31.10
16.06
0.98
6
8.02e-3
0
2
0.6
10
8.34
0.009
5.07
0.50e-12
0.95
0.5
0.11e-12
0.56
Parameters
MJC
XCJC
CJS
VJS
MJS
FC
TF
XTF
VTF
ITF
PTF
TR
EG
XTB
XTI
KF
AF
Q1
0.19
0
0
0.75
0
0.5
4e-12
12
1
0.04
120
1e-9
1.11
0
3
0
1
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
ADDITIONAL PARAMETERS
Parameters
C
CB
C
CE
L
B
L
E
C
CBPKG
C
CEPKG
L
BX
L
CX
L
EX
68533
0.13e-12
0.14e-12
0.3e-9
0.8e-9
0.08e-12
0.08e-12
0.12e-9
0.10e-9
0.12e-9
MODEL RANGE
Frequency: 0.1 to 4.0 GHz
Bias:
V
CE
= 0.5 V to 3 V, I
C
= 0.5 mA to 20 mA
Date:
11/98
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
NEC
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
06/10/2002
3-92
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Lead (Pb)
Mercury
Cadmium
Hexavalent Chromium
PBB
PBDE
Concentration Limit per RoHS
(values are not yet fixed)
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Concentration contained
in CEL devices
-A
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
-AZ
(*)
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