NPN SILICON RF TRANSISTOR
NE662M04
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
HIGH GAIN BANDWIDTH:
f
T
= 25 GHz
LOW NOISE FIGURE:
NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN:
20 dB at f = 2 GHz
NEW LOW PROFILE M04 PACKAGE:
•
SOT-343 footprint, with a height of just 0.59 mm
•
Flat Lead Style for better RF performance
M04
DESCRIPTION
NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz the
NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current
performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice
for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Maximum Available Power Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Maximum Stable Gain
5
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
pF
GHz
dB
dB
dB
dB
dBm
14
UNITS
nA
nA
50
20
70
25
20
20
17
1.1
11
22
0.18
0.24
1.5
MIN
NE662M04
2SC5508
M04
TYP
MAX
200
200
100
DC
I
EBO
h
FE
f
T
MAG
MSG
|S
21E
|
2
NF
P
1dB
IP
3
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG = S
21
(
K- (K
2
-1)
)
S
12
5. MSG = S
21
S
12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
RF
NE662M04
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
15
3.3
1.5
35
115
150
-65 to +150
TYPICAL NOISE PARAMETERS
FREQ.
(GHz)
NF
MIN
(dB)
G
A
(dB)
Γ
OPT
MAG
(T
A
= 25˚C)
ANG
Rn/50
V
C =
2 V
,
I
C =
3 mA
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.78
0.80
0.82
0.93
1.00
1.02
1.04
1.15
21.4
20.7
20.0
17.0
15.6
15.2
14.8
13.5
0.26
0.26
0.26
0.23
0.20
0.19
0.19
0.20
31.7
32.7
34.7
57.0
78.0
86.0
94.2
138.3
0.17
0.17
0.17
0.16
0.14
0.14
0.13
0.10
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
V
C =
2 V
,
I
C =
5 mA
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.93
0.94
0.96
1.03
1.07
1.09
1.10
1.17
22.5
21.8
21.1
18.1
18.7
16.3
15.9
14.3
0.12
0.12
0.12
0.09
0.08
0.08
0.08
0.14
28.1
28.8
31.7
71.1
106.2
118.5
130.5
-179.7
0.15
0.15
0.15
0.14
0.13
0.13
0.12
0.11
TYPICAL OPTIMAL NOISE MATCHING
(T
A
= 25˚C)
V
CE
= 2 V, l
C
= 5 mA, f= 1 GHz
1.0
0.5
2.0
V
C =
2 V
,
I
C =
10 mA
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.28
1.29
1.30
1.37
1.41
1.43
1.44
1.51
23.7
23.0
22.3
19.3
17.8
17.3
16.9
15.3
0.07
0.07
0.08
0.13
0.18
0.17
0.19
0.25
-159.4
-157.5
-155.7
-149.2
-146.1
-146.0
-143.9
-136.7
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.2
NF
MIN
= 1.0 dB
Γ
OPT
0
5.0
0
1.5 dB
-0.2
2.0 dB
3.0 dB
-0.5
-1.0
-2.0
-5.0
V
C =
2 V
,
I
C =
20 mA
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.59
1.61
1.63
1.72
1.78
1.79
1.81
1.90
24.5
23.7
23.0
19.9
18.3
17.9
17.5
15.8
0.28
0.28
0.27
0.30
0.33
0.34
0.35
0.40
-158.1
-155.5
-153.1
-142.6
-137.3
-135.7
-134.1
-126.5
0.12
0.13
0.13
0.14
0.15
0.08
0.16
0.18
V
CE
= 2 V, l
C
= 5 mA, f = 2 GHz
1.0
0.5
2.0
0.2
NF
MIN
= 1.1 dB
Γ
OPT
5.0
0
THERMAL RESISTANCE
0
ITEM
1.5 dB
-0.2
2.0 dB
3.0 dB
-0.5
-1.0
-2.0
-5.0
SYMBOL
R
th j-c
R
th j-a
VALUE
150
650
UNIT
°C/W
°C/W
Junction to Case Resistance
Junction to Ambient Resistance
NE662M04
TYPICAL PERFORMANCE CURVES
NOISE FIGURE AND ASSOCIATED
GAIN vs. FREQUENCY
4.5
V
CE
= 2V, l
C
= 5 mA
4.0
16
4.0
18
4.5
V
C
= 2V, l
C
= 10 mA
16
14
G
A
3.0
2.5
12
10
(T
A
= 25˚C)
NOISE FIGURE AND ASSOCIATED
GAIN vs. FREQUENCY
18
Associated Gain, G
A
(dB)
3.5
G
A
3.0
2.5
2.0
1.5
1.0
0.5
2
3
4
5
6
7
NF
14
12
10
8
6
4
2
8 9 10 12
3.5
2.0
1.5
NF
1.0
2
3
4
5
6
7
8 9 1012
8
6
4
Frequency, f (GHz)
Frequency, f (GHz)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
6.00
f = 2.5 GHz, V
CE
= 2 V
30.0
6.00
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
30.0
f = 1.5 GHz, V
CE
= 2 V
Associated Gain, G
A
(dB)
G
A
4.00
20.0
4.00
G
A
3.00
20.0
15.0
3.00
15.0
2.00
NF
10.0
2.00
NF
1.00
10.0
1.00
5.0
5.0
0.00
1
10
0.0
100
0.00
1
10
0.0
100
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
6.00
f = 2.0 GHz, V
CE
= 2 V
30.0
6.00
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
30.0
f = 1.0 GHz, V
CE
= 2 V
Associated Gain, G
A
(dB)
5.00
25.0
4.00
G
A
3.00
20.0
4.00
20.0
15.0
3.00
15.0
2.00
NF
10.0
2.00
NF
1.00
10.0
1.00
5.0
5.0
0.00
1
10
0.0
100
0.00
1
10
0.0
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Associated Gain, G
A
(dB)
5.00
G
A
25.0
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Associated Gain, G
A
(dB)
5.00
25.0
5.00
25.0
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Associated Gain, G
A
(dB)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NE662M04
TYPICAL PERFORMANCE CURVES
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
25
V
CE
= 2 V
110
120
V
CE
= 2 V
(T
A
= 25˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Gain Bandwdth, f
T
(GHz)
20
V
CE
= 1 V
100
DC Current Gain, hFE
90
80
70
60
50
40
30
15
10
5
0
1
5
10
20
25
30
35
20
.1
1
2
3
5
7
10
20 30
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
355
µA
305
µA
255
µA
20
205
µA
155
µA
105
µA
55
µA
IB = 5
µA
0
Total Power Dissipation, P
T
(mW)
Infinite Heatsink
Mounted on a Ceramic Substrate
150
Free Air
100
Collector Current, Ic (mA)
150
200
10
50
0
1
25
50
75
100
125
0
1.0
2.0
3.0
3.5
Ambient Temperature, T
A
(°C)
Collector to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
FEEDBACK CAPACITANCE vs.
COLLECTOR TO EMITTER VOLTAGE
0.50
Freq. = 1 MHz
Collector Current, Ic (mA)
40
Feedback Capacitance, C
RE
(pF)
600
800
1000
1200
V
CE
= 2 V
0.40
30
0.30
20
0.20
10
0.10
0
200
400
0
1.0
2.0
3.0
4.0
5.0
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Voltage, V
CE
(V)
NE662M04
TYPICAL PERFORMANCE CURVES
FORWARD INSERTION GAIN
vs. FREQUENCY
30
40
(T
A
= 25˚C)
FORWARD INSERTION GAIN AND
MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
V
CE
= 2 V,
I
C
= 20 mA
20
Forward Insertion Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
V
CE
= 2 V, I
C
= 5 mA
Forward Insertion Gain, IS
21
I
2
(dB)
30
MSG
20
IS
21
I
2
10
10
V
CE
= 2 V,
I
C
= 5 mA
MAG
0
0.1
1
2
10 12
0
0.1
1
2
10
Frequency, f (GHz)
FORWARD INSERTION GAIN AND
MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
40
30.00
Frequency, f (GHz)
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
Forward Insertion Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21
I
2
Maximum Available Gain, MAG (dB)
V
CE
= 2 V, I
C
= 20 mA
f = 2 GHz, V
CE
= 2 V
25.00
MAG
20.00
MSG
15.00
IS
21
I
2
30
MSG
20
IS
21
I
2
MAG
10.00
10
5.00
0
0.1
0.00
1
2
10
1
10
100
Frequency, f (GHz)
Collector Current, I
C
(mA)
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
30.00
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21
I
2
Maximum Available Gain, MAG (dB)
f = 1 GHz, V
CE
= 2 V
25.00
MSG
20.00
MAG
IS
21
I
2
15.00
10.00
5.00
0.00
1
10
100
Collector Current, I
C
(mA)
stm32/stm8
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