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IDT71215S10PF

产品描述Cache Tag SRAM, 16KX15, 10ns, BICMOS, PQFP80, PLASTIC, TQFP-80
产品类别存储    存储   
文件大小165KB,共12页
制造商IDT (Integrated Device Technology)
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IDT71215S10PF概述

Cache Tag SRAM, 16KX15, 10ns, BICMOS, PQFP80, PLASTIC, TQFP-80

IDT71215S10PF规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明PLASTIC, TQFP-80
针数80
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间10 ns
其他特性MATCH OUTPUT; 12-BIT TAG WIDTH; SYNCHRONOUS WRITE OPERATION
JESD-30 代码S-PQFP-G80
JESD-609代码e0
长度14 mm
内存密度245760 bit
内存集成电路类型CACHE TAG SRAM
内存宽度15
湿度敏感等级3
功能数量1
端口数量1
端子数量80
字数16384 words
字数代码16000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织16KX15
输出特性3-STATE
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP80,.64SQ
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
电源3.3/5,5 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.025 A
最大压摆率0.29 mA
最大供电电压 (Vsup)5.25 V
最小供电电压 (Vsup)4.75 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术BICMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
宽度14 mm

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A NEW GENERATION OF
TAG SRAMS—THE IDT71215 AND
IDT71216
Integrated Device Technology, Inc.
APPLICATION
NOTE
AN-136
By Kelly Maas
INTRODUCTION
The 71215 and 71216 represent a new generation of
integrated Tag SRAMs. Just as earlier Tag SRAMs such as
the 71B74 were better suited for tag applications than conven-
tional SRAMs, the 71215/16 go a step further by integrating
new features to significantly ease the design of high perfor-
mance cache subsystems for today’s high speed processors.
These Tag RAMs are designed for easy interfacing to Intel and
PowerPC processors, but are very flexible and can easily be
used in other applications as well.
This application note first provides some background infor-
mation on caches, then describes in detail the architecture
and operation of the 71215 and 71216. This is followed by
three application examples, then a brief discussion of cache
coherency protocol implementation using these Tag RAMs.
Since the 71215 and 71216 are very similar, the descriptions
and explanations in this application note apply to both unless
otherwise noted.
CACHE AND TAG BASICS
For those new to caches, a brief review of cache basics may
be worthwhile. A cache is a memory that provides a CPU with
high speed access to a subset of the data from main memory.
Our discussions are focused on the secondary cache, which
is also known as the L2 cache, but it is not much different from
the faster primary (L1) cache residing inside most CPUs.
The cache consists of a controller, a data memory and a tag
memory. The purpose of the data memory is to store the
active data from main memory, and is composed of either
synchronous burst or asynchronous SRAMs. The tag memory
stores indexes (part of the CPU address field) that indicate
which data is stored in the cache. Additionally, most caches
also require at least one bit of memory for each cache entry,
to indicate the valid or dirty status of that entry. Figure 1 shows
how the CPU address field relates to the cache and the tag
memory. This example includes valid and dirty status bits, and
represents a 512KB cache, 2GB cacheable address space,
32-byte line size, and 8-byte word size.
DATA SRAM ADDRESS
A31
MSB
A30
A19
A18
A5
A4
A3
LSB
TAG MEMORY
12
1
1
TAG
ADDRESS
TAG
LINE
VALID
LINE
DIRTY
COMPARATOR
MATCH
to CACHE CONTROLLER
3176 drw 01
Figure 1. CPU Address Field and the L2 Cache (Showing 512 KB cache size and 2 GB cacheable main memory)
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
PowerPC is a trademark of International Business Machines Corporation
Pentium is a trademark of Intel Corporation
©1995
Integrated Device Technology, Inc.
1/95

IDT71215S10PF相似产品对比

IDT71215S10PF IDT71215S8PF IDT71215S12PF IDT71216S12PF
描述 Cache Tag SRAM, 16KX15, 10ns, BICMOS, PQFP80, PLASTIC, TQFP-80 Cache Tag SRAM, 16KX15, 8ns, BICMOS, PQFP80, PLASTIC, TQFP-80 Cache Tag SRAM, 16KX15, 12ns, BICMOS, PQFP80, PLASTIC, TQFP-80 Cache Tag SRAM, 16KX15, 14ns, BICMOS, PQFP80, PLASTIC, TQFP-80
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 QFP QFP QFP QFP
包装说明 PLASTIC, TQFP-80 PLASTIC, TQFP-80 PLASTIC, TQFP-80 PLASTIC, TQFP-80
针数 80 80 80 80
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最长访问时间 10 ns 8 ns 12 ns 14 ns
JESD-30 代码 S-PQFP-G80 S-PQFP-G80 S-PQFP-G80 S-PQFP-G80
JESD-609代码 e0 e0 e0 e0
长度 14 mm 14 mm 14 mm 14 mm
内存密度 245760 bit 245760 bit 245760 bit 245760 bit
内存集成电路类型 CACHE TAG SRAM CACHE TAG SRAM CACHE TAG SRAM CACHE TAG SRAM
内存宽度 15 15 15 15
湿度敏感等级 3 3 3 3
功能数量 1 1 1 1
端口数量 1 1 1 1
端子数量 80 80 80 80
字数 16384 words 16384 words 16384 words 16384 words
字数代码 16000 16000 16000 16000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 16KX15 16KX15 16KX15 16KX15
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
可输出 YES YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP LQFP
封装等效代码 QFP80,.64SQ QFP80,.64SQ QFP80,.64SQ QFP80,.64SQ
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
电源 3.3/5,5 V 3.3/5,5 V 3.3/5,5 V 3.3/5,5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.025 A 0.025 A 0.025 A 0.025 A
最大压摆率 0.29 mA 0.33 mA 0.28 mA 0.28 mA
最大供电电压 (Vsup) 5.25 V 5.25 V 5.25 V 5.25 V
最小供电电压 (Vsup) 4.75 V 4.75 V 4.75 V 4.75 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES
技术 BICMOS BICMOS BICMOS BICMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.65 mm 0.65 mm 0.65 mm
端子位置 QUAD QUAD QUAD QUAD
宽度 14 mm 14 mm 14 mm 14 mm
其他特性 MATCH OUTPUT; 12-BIT TAG WIDTH; SYNCHRONOUS WRITE OPERATION - MATCH OUTPUT; 12-BIT TAG WIDTH; SYNCHRONOUS WRITE OPERATION MATCH OUTPUT; 12-BIT TAG WIDTH; SYNCHRONOUS WRITE OPERATION

 
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