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IDT70T651S12DRG8

产品描述Multi-Port SRAM, 256KX36, 12ns, CMOS, PQFP208
产品类别存储    存储   
文件大小232KB,共27页
制造商IDT (Integrated Device Technology)
标准  
下载文档 详细参数 全文预览

IDT70T651S12DRG8概述

Multi-Port SRAM, 256KX36, 12ns, CMOS, PQFP208

IDT70T651S12DRG8规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
Reach Compliance Codecompliant
最长访问时间12 ns
I/O 类型COMMON
JESD-30 代码S-PQFP-G208
JESD-609代码e3
内存密度9437184 bit
内存集成电路类型MULTI-PORT SRAM
内存宽度36
湿度敏感等级3
端口数量2
端子数量208
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码QFP
封装等效代码QFP208,1.2SQ,20
封装形状SQUARE
封装形式FLATPACK
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源2.5,2.5/3.3 V
认证状态Not Qualified
最大待机电流0.01 A
最小待机电流2.4 V
最大压摆率0.355 mA
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间30

文档预览

下载PDF文档
Features
HIGH-SPEED 2.5V
256/128K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
IDT70T651/9S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 8/10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T651/9 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad
Flatpack and 208-ball fine pitch Ball Grid Array.
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
L
CE
0L
CE
1L
BB
EE
01
LL
BB
EE
23
LL
BBBB
EEEE
3210
R RRR
R/
W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
OE
R
256/128K x 36
MEMORY
ARRAY
I/O
0L-
I/O
35L
Di n_L
Di n_R
I/O
0R -
I/O
35R
A
17L(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
17R(1)
A
0R
CE
0L
CE
1L
OE
L
R/W
L
BUSY
L (2,3)
SEM
L
INT
L(3)
ZZ
L
(4)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
R/W
R
CE
0R
CE
1R
TDI
TD O
JTAG
TC K
TMS
TRST
M/S
BUSY
R(2,3)
SEM
R
INT
R(3)
ZZ
R
(4)
NOTES:
1. Address A
17x
is a NC for IDT70T659.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the sleep
mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
CONTROL
LOGIC
4869 drw 01
JANUARY 2006
DSC-5632/5
1
©2006 Integrated Device Technology, Inc.

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