4V Drive Pch+Pch MOSFET
SH8J66
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
SOP8
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Applications
Switching
Each lead has same dimensions
Packaging
specifications
Package
Type
SH8J66
Code
Basic ordering unit (pieces)
Taping
TB
2500
Inner
circuit
(8)
(7)
(6)
(5)
∗2
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute
maximum ratings
(Ta=25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
Pw≤10μs, Duty cycle≤1%
∗2
Mounted on a ceramic board
∗1
∗1
(1)
(2)
(3)
(4)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
Tch
Tstg
∗2
Limits
−30
±20
±9
±36
−1.6
−36
2.0
1.4
150
−55
to
+150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
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2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A
SH8J66
Electrical
characteristics
(Ta=25C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol
Min.
Typ.
−
−
−
−
13.5
17.5
19.0
−
3000
400
400
20
60
170
100
35
9
12
Max.
±10
−
−1
−2.5
18.5
23.6
24.7
−
−
−
−
−
−
−
−
−
−
−
Gate-source leakage
−
I
GSS
Drain-source breakdown voltage V
(BR) DSS
−30
Zero gate voltage drain current
I
DSS
−
Gate threshold voltage
V
GS (th)
−1.0
−
Static drain-source on-state
∗
−
R
DS (on)
resistance
−
∗
Y
fs
11
Forward transfer admittance
Input capacitance
C
iss
−
Output capacitance
−
C
oss
C
rss
Reverse transfer capacitance
−
∗
−
Turn-on delay time
t
d (on)
t
r
∗
−
Rise time
∗
Turn-off delay time
−
t
d (off)
∗
t
f
Fall time
−
Q
g
∗
Total gate charge
−
∗
Gate-source charge
Q
gs
−
∗
Gate-drain charge
−
Q
gd
∗Pulsed
Data Sheet
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±20V,
V
DS
=0V
I
D
= −1mA,
V
GS
=0V
V
DS
= −30V,
V
GS
=0V
V
DS
= −10V,
I
D
= −1mA
I
D
= −9A,
V
GS
= −10V
I
D
= −4.5A,
V
GS
= −4.5V
I
D
= −4.5A,
V
GS
= −4.0V
V
DS
= −10V,
I
D
= −9A
V
DS
= −10V
V
GS
=0V
f=1MHz
V
DD
−15
V
I
D
= −4.5A
V
GS
= −10V
R
L
=3.3Ω
R
G
=10Ω
V
DD
−15V
I
D
= −9A
V
GS
= −5V
R
L
=1.7Ω
/ R
G
=10Ω
Body
diode characteristics
(Source-drain) (Ta=25C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
∗
Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
= −9A,
V
GS
=0V
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2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.01 - Rev.A
SH8J66
Electrical
characteristic curves
20
18
DRAIN CURRENT : -I
D
[A]
16
14
12
10
8
6
4
2
0
0.0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical output characteristics(
)
V
GS
= -2.5V
V
GS
= -3.5V
V
GS
= -3.0V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical output characteristics(
)
V
GS
= -2.2V
0.01
1.0
V
GS
= -2.5V
V
GS
= -10V
V
GS
= -4.0V
V
GS
= -3.0V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
100
V
DS
= -10V
Pulsed
Data Sheet
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
0.1
1.5
2.0
2.5
3.0
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
Ta=25°C
Pulsed
100
V
GS
= -10V
Pulsed
100
V
GS
= -4.5V
Pulsed
10
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
10
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
)
10
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
)
10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(I)
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
FORWARD TRANSFER ADMITTANCE :
|Yfs| [S]
REVERSE DRAIN CURRENT : -Is [A]
V
GS
= -4.0V
Pulsed
100
V
DS
= -10V
Pulsed
100
V
GS
=0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
V)
10
0
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
1.2
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2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.01 - Rev.A
SH8J66
50
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
45
40
35
30
25
20
15
10
0
5
10
15
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I
D
[A]
Fig.11 Switching Characteristics
1
0.01
0.1
1
10
I
D
= -4.5A
I
D
= -9.0A
Ta=25°C
Pulsed
10000
t
d(off)
Switching Time : t [ns]
1000
t
f
Ta=25°C
V
DD
= -15V
V
GS
=-10V
R
G
=10Ω
Pulsed
10
GATE-SOURCE VOLTAGE : -V
GS
[V]
Data Sheet
8
6
100
4
Ta=25°C
V
DD
= -15V
I
D
= -9.0A
R
G
=10Ω
Pulsed
0
10
20
30
40
50
60
70
10
t
r
t
d(on)
2
0
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
1000
Operation in this area is limited by R
DS(on)
(V
GS
=-10V)
1000
DRAIN CURRENT : -I
D
(A)
Ciss
CAPACITANCE : C [pF]
100
P
W
=100us
10
P
W
= 10ms
Crss
100
Coss
Ta=25°C
f=1MHz
V
GS
=0V
10
0.01
0.1
1
10
100
1
P
W
=1ms
0.1
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
0.01
0.1
DC operation
1
10
100
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Aera
NORMARIZED TRANSIENT THERMAL
10
RESISTANCE : r (t)
1
0.1
T a = 25°C
Single Pulse : 1Unit
0.01
0.001
0.001
0.01
0.1
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.01 - Rev.A
SH8J66
Measurement
circuits
Pulse Width
Data Sheet
V
GS
I
D
R
L
D.U.T.
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
R
G
V
DD
V
DS
90%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Test Circuit
Fig.1-2 Switching Time Waveforms
V
G
V
GS
I
D
R
L
I
G(Const.)
D.U.T.
R
G
V
DD
V
DS
Q
g
V
GS
Q
gs
Q
gd
Charge
Fig.2-1 Gate Charge Test Circuit
Fig.2-2 Gate Charge Waveform
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2010 ROHM Co., Ltd. All rights reserved.
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2010.01 - Rev.A
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