4V Drive Pch+Pch MOSFET
SH8J62
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Each lead has same dimensions
Dimensions
(Unit : mm)
SOP8
Packaging
specifications
Package
Type
SH8J62
Code
Basic ordering unit (pieces)
Taping
TB
2500
Inner
circuit
(8)
(7)
(6)
(5)
∗2
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Absolute
maximum ratings
(Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
Pw≤10μs, Duty cycle≤1%
∗2
Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
Tch
Tstg
∗2
Limits
−30
±20
±4.5
±18
−1.6
−18
2.0
1.4
150
−55
to
+150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
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2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A
SH8J62
Electrical
characteristics
(Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol
Min.
Typ.
−
−
−
−
40
55
60
−
800
120
110
7
15
70
50
8.0
2.5
3.0
Max.
±10
−
−1
−2.5
56
77
84
−
−
−
−
−
−
−
−
−
−
−
Gate-source leakage
−
I
GSS
Drain-source breakdown voltage V
(BR) DSS
−30
Zero gate voltage drain current
I
DSS
−
Gate threshold voltage
V
GS (th)
−1.0
−
Static drain-source on-state
∗
−
R
DS (on)
resistance
−
∗
Y
fs
3.5
Forward transfer admittance
Input capacitance
C
iss
−
Output capacitance
−
C
oss
C
rss
Reverse transfer capacitance
−
∗
−
Turn-on delay time
t
d (on)
∗
t
r
−
Rise time
∗
Turn-off delay time
−
t
d (off)
∗
t
f
Fall time
−
∗
Total gate charge
−
Q
g
∗
Gate-source charge
Q
gs
−
∗
Gate-drain charge
Q
gd
−
∗Pulsed
Data Sheet
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±20V,
V
DS
=0V
I
D
= −1mA,
V
GS
=0V
V
DS
= −30V,
V
GS
=0V
V
DS
= −10V,
I
D
= −1mA
I
D
= −4.5A,
V
GS
= −10V
I
D
= −2.5A,
V
GS
= −4.5V
I
D
= −2.5A,
V
GS
= −4.0V
V
DS
= −10V,
I
D
= −4.5A
V
DS
= −10V
V
GS
=0V
f=1MHz
I
D
= −2.5A
V
DD
−15
V
V
GS
= −10V
R
L
=6.0Ω
R
G
=10Ω
V
DD
−15V
I
D
= −4.5A
V
GS
= −5V
R
L
=3.3Ω /
R
G
=10Ω
Body
diode characteristics
(Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
∗
Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
= −4.5A,
V
GS
=0V
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2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.01 - Rev.A
SH8J62
Electrical
characteristic curves
20
20
Ta=25°C
Pulsed
18
16
14
12
10
8
6
4
2
0
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
0.01
1.0
1.5
2.0
2.5
Ta=25°C
V
GS
= -10V Pulsed
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.8V
10
V
DS
= -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Data Sheet
DRAIN CURRENT : -I
D
[A]
DRAIN CURRENT : -I
D
[A]
15
10
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
DRAIN CURRENT : -I
D
[A]
1
5
V
GS
= -3.5V
V
GS
= -3.0V
V
GS
= -3.2V
0.1
0
3.0
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical output characteristics(
Ⅰ
)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical output characteristics(
Ⅱ
)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
1000
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
Ta=25°C
Pulsed
1000
V
GS
= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
100
100
100
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ
)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ
)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ
)
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
1000
10
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
REVERSE DRAIN CURRENT : -Is [A]
V
GS
= -4.0V
Pulsed
V
DS
= -10V
Pulsed
V
GS
=0V
Pulsed
1
100
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
10
0.1
0.01
0.1
1
10
0.01
0.0
0.5
1.0
1.5
DRAIN-CURRENT : -I
D
[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.01 - Rev.A
SH8J62
200
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
Ω
]
Data Sheet
10000
Ta=25°C
Pulsed
Switching Time : t [ns]
GATE-SOURCE VOLTAGE : -V
GS
[V]
10
Ta=25°C
V
DD
= -15V
V
GS
=-10V
R
G
=10
Ω
Pulsed
8
6
4
2
0
0
5
10
15
Ta=25°C
V
DD
= -15V
I
D
= -4.5A
R
G
=10
Ω
Pulsed
150
I
D
= -4.5A
I
D
= -2.5A
1000
t
d(off)
t
f
100
100
t
r
t
d(on)
50
10
0
0
5
10
15
1
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I
D
[A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
Ta=25°C
f=1MHz
V
GS
=0V
1000
Ciss
DRAIN CURRENT : -I
D
(A)
1000
100
Operation in this area is limited by R
DS(on)
(V
GS
=-10V)
P
W
= 1ms
P
W
=100us
CAPACITANCE : C [pF]
10
1
DC operation
P
W
=10ms
100
Coss
Crss
10
0.01
0.1
1
10
100
0.1
0.01
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.14 Maximum Safe Operating Area
10
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.01
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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○
2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.01 - Rev.A
SH8J62
Measurement
circuits
Pulse Width
Data Sheet
V
GS
I
D
R
L
D.U.T.
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
R
G
V
DD
V
DS
90%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Test Circuit
Fig.1-2 Switching Time Waveforms
V
G
V
GS
I
D
R
L
I
G(Const.)
D.U.T.
R
G
V
DD
V
DS
Q
g
V
GS
Q
gs
Q
gd
Charge
Fig.2-1 Gate Charge Test Circuit
Fig.2-2 Gate Charge Waveform
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2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.01 - Rev.A
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