1.5V Drive Pch MOSFET
RZQ050P01
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TSMT6
1.0MAX
0.85
0.7
(1)
(2)
(3)
1pin mark
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : YF
Applications
Switching
Packaging specifications
Package
Type
RZQ050P01
Code
Basic ordering unit (pieces)
Taping
TR
3000
Equivalent circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
When mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
∗1
∗1
∗2
Limits
−12
±10
±5
±20
−1
−20
1.25
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
When mounted on a ceramic board.
Symbol
Rth(ch-a)
∗
Limits
100
Unit
°C
/ W
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○
2009 ROHM Co., Ltd. All rights reserved.
0.3~0.6
Features
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
2.9
1.9
0.95 0.95
(6)
(5)
(4)
1.6
2.8
0~0.1
1/5
2009.01 - Rev.A
RZQ050P01
Electrical characteristics
(Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
−
I
GSS
Drain-source breakdown voltage V
(BR) DSS
−12
Zero gate voltage drain current
I
DSS
−
Gate threshold voltage
V
GS (th)
−0.3
−
∗
Static drain-source on-state
−
R
DS (on)
resistance
−
−
∗
Forward transfer admittance
8
Y
fs
Input capacitance
C
iss
−
Output capacitance
C
oss
−
Reverse transfer capacitance
−
C
rss
∗
Turn-on delay time
−
t
d (on)
∗
Rise time
t
r
−
∗
Turn-off delay time
−
t
d (off)
∗
Fall time
−
t
f
∗
Total gate charge
Q
g
−
∗
Gate-source charge
−
Q
gs
∗
Gate-drain charge
−
Q
gd
∗Pulsed
Data Sheet
Typ.
−
−
−
−
19
26
33
44
−
2850
350
320
12
100
420
225
35
6.5
5.5
Max.
±10
−
−1
−1.0
26
36
49
88
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±10V, V
DS
=0V
I
D
=
−1mA,
V
GS
=0V
V
DS
=
−12V,
V
GS
=0V
V
DS
=
−6V,
I
D
=
−1mA
I
D
=
−5A,
V
GS
=
−4.5V
I
D
=
−2.5A,
V
GS
=
−2.5V
I
D
=
−2.5A,
V
GS
=
−1.8V
I
D
=
−1A,
V
GS
=
−1.5V
V
DS
=
−6V,
I
D
=
−5A
V
DS
=
−6V
V
GS
=0V
f=1MHz
I
D
=
−2.5A
V
DD
−6
V
V
GS
=
−4.5V
R
L
2.4Ω
R
G
=10Ω
R
L
1.2Ω
V
DD
−6V
V
GS
=
−4.5V
R
G
=10Ω
I
D
=
−5A
Body diode characteristics
(Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
=
−5A,
V
GS
=0V
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2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.01 - Rev.A
RZQ050P01
Electrical characteristic curves
10
8
6
4
2
V
GS
=-1.0V
0
0
0.2
0.4
0.6
0.8
1
Ta=25℃
Pulsed
DRAIN CURRENT : -I
D
[A]
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-2.5V
V
GS
=-1.8V
V =-1.2V
V
GS
=-1.5V
GS
V
GS
=-1.1V
10
8
6
4
2
0
0
2
4
6
8
10
V
GS
=-1.2V
V
GS
=-1.8V
V
GS
=-1.5V
DRAIN CURRENT : -I
D
[A]
V
GS
=-1.3V
1
10
V
DS
=-6V
Pulsed
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
Data Sheet
DRAIN CURRENT : -I
D
[A]
0.1
V
GS
=-1.1V Ta=25℃
Pulsed
0.01
0.001
0
0.5
1
1.5
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical Output Characteristics(Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
Ta=25℃
Pulsed
100
V
GS
= -1.5V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
V
GS
= -4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
1000
1000
1000
100
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
V
GS
= -2.5V
Pulsed
100
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta=-25℃
10
10
10
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
REVERSE DRAIN CURRENT : -Is [A]
1000
V
GS
= -1.8V
Pulsed
100
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta=-25℃
1000
V
GS
= -1.5V
Pulsed
100
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta=-25℃
10
V
GS
=0V
Pulsed
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta=-25℃
1
10
10
0.1
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
10
1
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
10
0.01
0
0.2
0.4
0.6
0.8
1
1.2
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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2009 ROHM Co., Ltd. All rights reserved.
3/5
2009.01 - Rev.A
RZQ050P01
Data Sheet
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
150
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
125
100
75
50
25
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
I
D
= -5.0A
I
D
= -2.5A
Ta=25℃
Pulsed
100
10
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta=-25℃
GATE-SOURCE VOLTAGE : -V
GS
[V]
10
V
DS
=-6V
Pulsed
5
Ta=25℃
V
DD
=-6.0V
4
I
D
=-5.0A
R
G
=10Ω
3 Pulsed
2
1
0
0
5
10
15
20
25
30
35
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
0
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.11 Forward Transfer Admittance
vs. Drain Current
10000
SWITCHING TIME : t [ns]
CAPACITANCE : C [pF]
Ciss
100000
10000
1000
100
10
tr
1
0.01
0.1
1
10
100
0.01
0.1
1
td(on)
tf
td(off)
Ta=25℃
V
DD
= -6.0V
V
GS
= -4.5V
R
G
= 10Ω
Pulsed
1000
Crss
Ta=25℃
f=1MHz
V
GS
=0V
100
Coss
10
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : -I
D
[A]
Fig.14 Switching Characteristics
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2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.01 - Rev.A
RZQ050P01
Measurement circuits
Pulse Width
V
GS
I
D
R
L
D.U.T.
R
G
V
DD
V
DS
Data Sheet
V
GS
10%
50%
10%
90%
50%
10%
90%
V
DS
90%
t
d(on)
t
on
tr
t
d(off)
t
off
tf
Fig.15 Switching Time Measurement Circuit
Fig.16 Switching Waveforms
V
G
V
GS
I
D
R
L
V
DS
V
GS
Q
gs
Q
g
I
G(Const)
D.U.T.
R
G
V
DD
Q
gd
Charge
Fig.17 Gate Charge Measurement Circuit
Fig.18 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment .
Please consider to design ESD protection circuit.
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○
2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.01 - Rev.A
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