4V Drive Nch MOSFET
RVQ040N05
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
TSMT6
1.0MAX
0.85
0.7
Features
1) Low On-resistance.
2) Space saving
small surface mount package (TSMT6).
1pin mark
2.9
1.9
0.95 0.95
(6)
(5)
(4)
1.6
2.8
0~0.1
(1)
(2)
(3)
0.4
0.16
Applications
Switching
Packaging specifications
Package
Type
RVQ040N05
Code
Basic ordering unit (pieces)
Taping
TR
3000
Each lead has same dimensions
Abbreviated symbol : QG
Inner circuit
(6)
(5)
(4)
∗2
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
45
21
±4.0
±16
1.6
16
1.25
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
Mounted on a ceramic board
Symbol
Rth(ch-a)
∗
Limits
100
Unit
°C/W
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2009 ROHM Co., Ltd. All rights reserved.
0.3~0.6
1/5
2009.02 - Rev.A
RVQ040N05
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
−
45
−
1.0
−
−
−
3.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
38
47
53
−
530
120
65
12
15
40
12
6.3
2.0
2.6
Max.
10
−
1
2.5
53
66
74
−
−
−
−
−
−
−
−
8.8
−
−
I
GSS
Gate-source leakage
Drain-source breakdown voltage V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Data Sheet
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=21V, V
DS
=0V
I
D
= 1mA, V
GS
=0V
V
DS
= 45V, V
GS
=0V
V
DS
= 10V, I
D
= 1mA
I
D
= 4A, V
GS
= 10V
I
D
= 4A, V
GS
= 4.5V
I
D
= 4A, V
GS
= 4.0V
V
DS
= 10V, I
D
= 4A
V
DS
= 10V
V
GS
=0V
f=1MHz
V
DD
25V
I
D
= 2.0A
V
GS
= 10V
R
L
=12.5Ω
R
G
=10Ω
V
DD
25V, I
D
= 4A
V
GS
= 5V
R
L
=6Ω, R
G
=10Ω
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Body diode characteristics
(Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
= 4.0A, V
GS
=0V
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2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.02 - Rev.A
RVQ040N05
Electrical characteristic curves
5
DRAIN CURRENT : I
D
[A]
4
3
V
GS
= 3.0V
2
V
GS
= 2.6V
1
0
0
0.2
0.4
0.6
0.8
1
V
GS
= 2.4V
Ta=25°C
Pulsed
DRAIN CURRENT : I
D
[A]
5
4
3
2
1
0
0
2
4
6
8
10
V
GS
= 2.4V
V
GS
= 10V
V
GS
= 4.5
V
GS
= 4.0V
Ta=25°C
Pulsed
V
GS
= 2.8V
DRAIN CURRENT : I
D
[A]
10
Data Sheet
V
GS
= 10V
V
GS
= 4.5
V
GS
= 4.0V
V
DS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
V
GS
= 2.8V
V
GS
= 2.6V
0.1
0.01
0.001
0
1
2
3
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.2 Typical Output Characteristics(Ⅱ)
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Ta= 25°C
Pulsed
1000
V
GS
= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
V
GS
= 4.5V
Pulsed
100
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
10
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10
1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
1000
V
GS
= 4.0V
Pulsed
100
100
REVERSE DRAIN CURRENT : Is [A]
V
DS
= 10V
Pulsed
10
10
V
GS
=0V
Pulsed
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
10
0.1
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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2009 ROHM Co., Ltd. All rights reserved.
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2009.02 - Rev.A
RVQ040N05
Data Sheet
60
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
SWITCHING TIME : t [ns]
Ta=25°C
Pulsed
50
I
D
= 2.0A
I
D
= 4.0A
40
10000
t
d
(off)
t
f
GATE-SOURCE VOLTAGE : V
GS
[V]
Ta=25°C
V
DD
= 25V
V
GS
= 10V
R
G
=10Ω
Pulsed
10
8
6
4
2
0
0
2
4
6
8
10
12
Ta=25°C
V
DD
= 25V
I
D
= 4.0A
R
G
=10Ω
Pulsed
1000
100
t
d
(on)
10
t
r
30
0
5
10
15
20
1
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : I
D
[A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
CAPACITANCE : C [pF]
Ta=25°C
f=1MHz
V
GS
=0V
1000
100
Operation in this area is limited
by R
DS(ON)
(V
GS
= 10V)
Pw=100us
DRAIN CURRENT : I
D
(A)
Ciss
10
Pw=1ms
Pw=10ms
1
DC operation
100
Crss
Coss
10
0.01
0.1
1
10
100
0.1
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.14 Maximum Safe Operating Aera
NORMARIZED TRANSIENT THERMAL
RESISTANCE
: r (t)
10
1
0.1
0.01
0.001
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 100 °C/W
<Mounted on a CERAMIC board>
0.001
0.01
0.1
1
10
100
1000
0.0001
0.0001
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2009 ROHM Co., Ltd. All rights reserved.
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2009.02 - Rev.A
RVQ040N05
Measurement circuit
Pulse Width
V
GS
I
D
R
L
D.U.T.
R
G
V
DD
V
DS
Data Sheet
V
GS
V
DS
50%
10%
10%
90%
t
d(on)
t
on
t
r
90%
50%
10%
90%
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
I
D
R
L
I
G(Const.)
D.U.T.
R
G
V
DD
V
DS
Q
g
V
GS
Q
gs
Q
gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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2009 ROHM Co., Ltd. All rights reserved.
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2009.02 - Rev.A
嵌入式系统
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