RUF020N02
Electrical characteristics curves
4
Ta=25°C
Pulsed
DRAIN CURRENT : I
D
[A]
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 1.8V
2
V
GS
= 1.5V
V
GS
= 1.3V
1
4
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 1.8V
Ta=25°C
Pulsed
DRAIN CURRENT : I
D
[A]
10
V
DS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Data Sheet
DRAIN CURRENT : I
D
[A]
3
3
1
V
GS
= 1.5V
2
0.1
1
V
GS
= 1.3V
V
GS
= 1.2V
0.01
V
GS
= 1.2V
0
0
0.2
0.4
0.6
0.8
1
0
0
2
4
6
0.001
8
10
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.1 Typical Output Characteristics(
Ⅰ
)
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.2 Typical Output Characteristics(
Ⅱ
)
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
Ta= 25°C
Pulsed
1000
V
GS
= 1.5V
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
V
GS
= 4.5V
Pulsed
1000
V
GS
= 2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.01
0.1
1
10
10
0.01
0.1
1
10
10
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ
)
DRAIN-CURRENT : I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ
)
DRAIN-CURRENT : I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ
)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
V
GS
= 1.8V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= 1.5V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
10
V
DS
= 10V
Pulsed
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
0.01
0.1
1
10
10
0.01
0.1
1
10
0.1
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
DRAIN-CURRENT : I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅴ
)
DRAIN-CURRENT : I
D
[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
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○
2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.06 - Rev.A
RUF020N02
REVERSE DRAIN CURRENT : Is [A]
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
V
GS
=0V
Pulsed
300
250
200
150
100
50
t
r
0
0
0.5
1
1.5
0
2
4
6
8
10
1
0.01
0.1
1
10
I
D
= 2.0A
I
D
= 1.0A
Ta=25°C
Pulsed
SWITCHING TIME : t [ns]
1000
t
d
(off)
t
f
100
Ta=25°C
V
DD
= 10V
V
GS
=4.5V
R
G
=10Ω
Pulsed
Data Sheet
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
t
d
(on)
0.01
SOURCE-DRAIN VOLTAGE : V
SD
[V]
Fig.10 Reverse Drain Current22
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : I
D
[A]
Fig.12 Switching Characteristics
5
GATE-SOURCE VOLTAGE : V
GS
[V]
1000
Ciss
CAPACITANCE : C [pF]
Ta=25°C
V
DD
= 10V
4 I
D
= 2A
R
G
=10Ω
Pulsed
3
100
Coss
2
1
10
0
0.5
1
1.5
2
2.5
3
0
Ta=25°C
f=1MHz
V
GS
=0V
0.01
0.1
Crss
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
[V]
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Measurement circuit
Pulse Width
V
GS
I
D
V
DS
V
GS
50%
10%
10%
90%
50%
10%
R
L
D.U.T.
R
G
V
DD
V
DS
90%
t
d(on)
t
on
t
r
t
d(off)
t
off
90%
t
r
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
I
D
V
DS
R
L
I
G (Const.)
R
G
D.U.T.
V
DD
Q
g
V
GS
Q
gs
Q
gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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○
2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.06 - Rev.A
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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