4V Drive Nch MOSFET
RSH110N03
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Dimensions
(Unit : mm)
SOP8
Packaging
specifications
Package
Type
RSH110N03
Code
Basic ordering unit (pieces)
Taping
TB
2500
Inner
circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗1
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
Absolute
maximum ratings
(Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw≤10μs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
30
20
±11
±44
1.6
22
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal
resistance
Parameter
Channel to ambient
∗
Mounted on a ceramic board.
Symbol
Rth (ch-a)
∗
Limits
62.5
Unit
°C
/ W
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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