4MX8 FLASH 3V PROM, 90ns, PBGA63, 8 X 14 MM, 0.80 MM PITCH, FBGA-63
参数名称 | 属性值 |
厂商名称 | AMD(超微) |
零件包装代码 | BGA |
包装说明 | TFBGA, |
针数 | 63 |
Reach Compliance Code | unknown |
最长访问时间 | 90 ns |
其他特性 | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION |
JESD-30 代码 | R-PBGA-B63 |
长度 | 14 mm |
内存密度 | 33554432 bit |
内存集成电路类型 | FLASH |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 63 |
字数 | 4194304 words |
字数代码 | 4000000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 4MX8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TFBGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行 | PARALLEL |
编程电压 | 3 V |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 2.7 V |
标称供电电压 (Vsup) | 3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
宽度 | 8 mm |
AM29LV033C90WDE | AM29LV033C120EE | AM29LV033C90WDI | AM29LV033C70EI | AM29LV033C120WDE | AM29LV033C70FI | AM29LV033C90FI | AM29LV033C70WDI | AM29LV033C120EI | |
---|---|---|---|---|---|---|---|---|---|
描述 | 4MX8 FLASH 3V PROM, 90ns, PBGA63, 8 X 14 MM, 0.80 MM PITCH, FBGA-63 | 4MX8 FLASH 3V PROM, 120ns, PDSO40, TSOP-40 | 4MX8 FLASH 3V PROM, 90ns, PBGA63, 8 X 14 MM, 0.80 MM PITCH, FBGA-63 | 4MX8 FLASH 3V PROM, 70ns, PDSO40, TSOP-40 | 4MX8 FLASH 3V PROM, 120ns, PBGA63, 8 X 14 MM, 0.80 MM PITCH, FBGA-63 | 4MX8 FLASH 3V PROM, 70ns, PDSO40, REVERSE, TSOP-40 | 4MX8 FLASH 3V PROM, 90ns, PDSO40, REVERSE, TSOP-40 | 4MX8 FLASH 3V PROM, 70ns, PBGA63, 8 X 14 MM, 0.80 MM PITCH, FBGA-63 | 4MX8 FLASH 3V PROM, 120ns, PDSO40, TSOP-40 |
零件包装代码 | BGA | TSOP | BGA | TSOP | BGA | TSOP | TSOP | BGA | TSOP |
包装说明 | TFBGA, | TSOP-40 | TFBGA, | TSOP-40 | TFBGA, | TSOP1-R, | REVERSE, TSOP-40 | TFBGA, | TSOP-40 |
针数 | 63 | 40 | 63 | 40 | 63 | 40 | 40 | 63 | 40 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
最长访问时间 | 90 ns | 120 ns | 90 ns | 70 ns | 120 ns | 70 ns | 90 ns | 70 ns | 120 ns |
JESD-30 代码 | R-PBGA-B63 | R-PDSO-G40 | R-PBGA-B63 | R-PDSO-G40 | R-PBGA-B63 | R-PDSO-G40 | R-PDSO-G40 | R-PBGA-B63 | R-PDSO-G40 |
长度 | 14 mm | 18.4 mm | 14 mm | 18.4 mm | 14 mm | 18.4 mm | 18.4 mm | 14 mm | 18.4 mm |
内存密度 | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit |
内存集成电路类型 | FLASH | FLASH | FLASH | FLASH | FLASH | FLASH | FLASH | FLASH | FLASH |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 63 | 40 | 63 | 40 | 63 | 40 | 40 | 63 | 40 |
字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 85 °C | 85 °C | 125 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -55 °C | -55 °C | -40 °C | -40 °C | -55 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 4MX8 | 4MX8 | 4MX8 | 4MX8 | 4MX8 | 4MX8 | 4MX8 | 4MX8 | 4MX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TSOP1 | TFBGA | TSOP1 | TFBGA | TSOP1-R | TSOP1-R | TFBGA | TSOP1 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
编程电压 | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
标称供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | INDUSTRIAL | INDUSTRIAL | MILITARY | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | BALL | GULL WING | BALL | GULL WING | BALL | GULL WING | GULL WING | BALL | GULL WING |
端子节距 | 0.8 mm | 0.5 mm | 0.8 mm | 0.5 mm | 0.8 mm | 0.5 mm | 0.5 mm | 0.8 mm | 0.5 mm |
端子位置 | BOTTOM | DUAL | BOTTOM | DUAL | BOTTOM | DUAL | DUAL | BOTTOM | DUAL |
宽度 | 8 mm | 10 mm | 8 mm | 10 mm | 8 mm | 10 mm | 10 mm | 8 mm | 10 mm |
厂商名称 | AMD(超微) | - | AMD(超微) | - | - | - | AMD(超微) | AMD(超微) | AMD(超微) |
其他特性 | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | - | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | - | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | - | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
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