RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
| 参数名称 | 属性值 |
| 厂商名称 | Motorola ( NXP ) |
| 包装说明 | POST/STUD MOUNT, O-CRPM-F4 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | DIFFUSED BALLAST RESISTORS |
| 最大集电极电流 (IC) | 1.25 A |
| 基于收集器的最大容量 | 12 pF |
| 集电极-发射极最大电压 | 30 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 10 |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | O-CRPM-F4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND |
| 封装形式 | POST/STUD MOUNT |
| 极性/信道类型 | NPN |
| 功耗环境最大值 | 20 W |
| 最小功率增益 (Gp) | 8.2 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | FLAT |
| 端子位置 | RADIAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| PT9703B | PT9704B | PT9701B | |
|---|---|---|---|
| 描述 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.75A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN |
| 厂商名称 | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| 包装说明 | POST/STUD MOUNT, O-CRPM-F4 | POST/STUD MOUNT, O-CRPM-F4 | POST/STUD MOUNT, O-CRPM-F4 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 其他特性 | DIFFUSED BALLAST RESISTORS | DIFFUSED BALLAST RESISTORS | DIFFUSED BALLAST RESISTORS |
| 最大集电极电流 (IC) | 1.25 A | 5 A | 0.75 A |
| 基于收集器的最大容量 | 12 pF | 36 pF | 6 pF |
| 集电极-发射极最大电压 | 30 V | 30 V | 30 V |
| 配置 | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 10 | 10 | 10 |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | O-CRPM-F4 | O-CRPM-F4 | O-CRPM-F4 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | ROUND | ROUND |
| 封装形式 | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| 极性/信道类型 | NPN | NPN | NPN |
| 功耗环境最大值 | 20 W | 70 W | 10 W |
| 最小功率增益 (Gp) | 8.2 dB | 7 dB | 9 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子形式 | FLAT | FLAT | FLAT |
| 端子位置 | RADIAL | RADIAL | RADIAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
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