电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MT8VDDT3232UY-6XX

产品描述DDR DRAM Module, 32MX32, 0.7ns, CMOS, LEAD FREE, DIMM-100
产品类别存储    存储   
文件大小647KB,共36页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT8VDDT3232UY-6XX概述

DDR DRAM Module, 32MX32, 0.7ns, CMOS, LEAD FREE, DIMM-100

MT8VDDT3232UY-6XX规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码DIMM
包装说明DIMM,
针数100
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式DUAL BANK PAGE BURST
最长访问时间0.7 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-XDMA-N100
JESD-609代码e4
内存密度1073741824 bit
内存集成电路类型DDR DRAM MODULE
内存宽度32
功能数量1
端口数量1
端子数量100
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32MX32
封装主体材料UNSPECIFIED
封装代码DIMM
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)260
认证状态Not Qualified
自我刷新YES
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Gold (Au)
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间30

文档预览

下载PDF文档
128MB, 256MB, 512MB: (x32, DR) 100-Pin DDR UDIMM
Features
DDR SDRAM Unbuffered DIMM
MT8VDDT3232U –
128MB
MT8VDDT6432U –
256MB
MT8VDDT12832U –
512MB
For DDR SDRAM component specifications, please refer to the Micron
®
Web site:
www.micron.com/
Features
• 100-pin, dual in-line memory module (DIMM)
• Fast data transfer rate: PC2100 and PC2700
• Utilizes 266 MT/s or 333 MT/s DDR SDRAM
components
• 128MB (16 Meg x 32), 256MB (32 Meg x 32), 512MB
(64 Meg x 32)
• V
DD
= +2.5V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Auto Refresh and Self Refresh Modes
• 15.625µs (128MB), 7.8125µs (256MB, 512MB)
maximum average periodic refresh interval
• Gold edge contacts
• Dual rank
Figure 1:
100-Pin DIMM (MO-161)
Options
• Package
100-pin DIMM (standard)
100-pin DIMM (lead-free)
1
• Operating Temperature Range
Commercial (ambient)
Industrial (ambient)
• Frequency/CAS Latency
2
6ns/167 MHz (333MT/s) CL = 2.5
7.5ns/133 MHz (266 MT/s) CL = 2
7.5ns/133 MHz (266 MT/s) CL = 2.5
2. CL = CAS (READ) latency.
Marking
G
Y
None
I
-6
-75Z
1
-75
Notes: 1. Contact Micron for product availability.
pdf: 09005aef80745603, source: 09005aef807455eb
DD8C32_64_128x32UG_1.fm - Rev. G 5/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004, 2005 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1983  924  2362  1721  1960  53  21  50  37  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved