电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N6620US_09

产品描述1.2 A, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小328KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 选型对比 全文预览

1N6620US_09概述

1.2 A, SILICON, RECTIFIER DIODE

文档预览

下载PDF文档
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
APPEARANCE
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
Package “A”
Axial
FEATURES
Popular JEDEC registered 1N6620 to 1N6625 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
I”
Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
Further options for screening in accordance with
MIL-PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6620, SP6624, etc.
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N6620US thru 1N6625US)
APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction Temperature: -65
o
C to +150
o
C
Storage Temperature: -65
o
C to +175
o
C
Peak Forward Surge Current @ 25
o
C: 20 Amps
(except 1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
Average Rectified Forward Current (I
O
) at T
L
= +55
o
C
(L=.375 inch from body):
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 0.833%/
o
C for T
L
> +55
o
C)
Average Rectified Forward Current (I
O
) at T
A
=25
o
C:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/
o
C for T
A
>+25
o
C. This I
O
rating is typical for PC boards where thermal
resistance from mounting point to ambient is
sufficiently controlled where T
J(max)
is not exceeded.)
Thermal Resistance L= 0.375 inch (R
θ
JL
): 38
o
C/W
Capacitance at V
R
= 10 V: 10 pF
o
Solder temperature: 260 C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
See package dimensions on last page
1N6620 thru 1N6625
Copyright
©
2009
10-06-2009 REV C; SA7-55.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N6620US_09相似产品对比

1N6620US_09 1N6624 1N6625 AP85U03GMT-HF_16 KX2511Z2032.768000
描述 1.2 A, SILICON, RECTIFIER DIODE SILICON, RECTIFIER DIODE 1.5 A, SILICON, RECTIFIER DIODE Simple Drive Requirement CMOS 32.768kHz

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1454  763  1190  880  358  30  16  24  18  8 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved