1N5807CBUS thru 1N5811CBUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/742 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using
an internal “Category III” metallurgical bond. These devices are also available in axial-
leaded package configurations (see separate data sheet for 1N5807CB thru 1N5811CB).
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “E”
or D-5B
FEATURES
•
Surface mount package series equivalent to the JEDEC
registered 1N5807 to 1N5811 series
•
Voidless-hermetically-sealed glass package
•
Extremely robust construction
•
Triple-layer passivation
•
Internal “Category
III”
Metallurgical bonds
•
JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
•
Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
•
Axial-leaded equivalents also available (see separate data
sheet for 1N5807CB thru 1N5811CB)
APPLICATIONS / BENEFITS
•
Ultrafast recovery 6 Amp rectifier series 50 to 150V
•
Military and other high-reliability applications
•
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
•
High forward surge current capability
•
Low thermal resistance
•
Controlled avalanche with peak reverse power
capability
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
•
•
•
•
•
•
•
Operating Temperature: -65
o
C to +175
o
C.
Storage Temperature: -65
o
C to +175
o
C.
Average Rectified Forward Current (I
O
): 6 Amps @ T
EC
= 75ºC End Cap temperature (see note 1)
Thermal Resistance: 6.5 ºC/W junction to end cap
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
•
•
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
1N5807CBUS
1N5809CBUS
50
100
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
V
BR
VOLTS
60
110
AVERAGE
RECTIFIED
CURRENT
I
O1
@T
EC
=75
º
C
(Note 1)
AMPS
6.0
6.0
AVERAGE
RECTIFIED
CURRENT
I
O2
@T
A
=55
º
C
(Note 2)
AMPS
3.0
3.0
MAXIMUM
FORWARD
VOLTAGE
@4A
(8.3 ms pulse)
V
F
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
AMPS
125
125
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
ns
30
30
1N5807CBUS–1N5811CBUS
TYPE
VOLTS
μA
o
o
o
o
25 C
100 C 25 C 125 C
525
5
0.800
0.875
0.875
0.800
5
525
30
125
525
5
0.800
0.875
3.0
6.0
160
150
1N5811CBUS
NOTE 1:
Rated at T
EC
= 75ºC. Derate at 60 mA/ºC for T
EC
above 75ºC
NOTE 2:
Derate linearly at 25 mA/ºC above T
A
= 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
J(max)
does not exceed 175ºC
o
NOTE 3:
T
A
= 25 C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4:
I
F
= 1.0 A, I
RM
= 1.0 A,
I
R(REC)
= 0.10 A and di/dt = 100 A/µs min
Copyright
©
2007
7-26-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5807CBUS thru 1N5811CBUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
Symbol
V
BR
V
RWM
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
FIGURE 1
TYPICAL FORWARD CURRENT
vs. FORWARD VOLTAGE
FIGURE 2
TYPICAL REVERSE CURRENT vs. VOLTAGE
1N5807CBUS–1N5811CBUS
FIGURE 3
FORWARD PULSE CURRENT vs. DURATION
Copyright
©
2007
7-26-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N5807CBUS thru 1N5811CBUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
FIGURE 4
MULTIPLE SURGE CURRENT vs. DURATION
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
been identified as “D-5B”
INCHES
MIN
BL
BD
ECT
S
.205
.137
.019
.003
MAX
.225
.142
.028
---
MIN
5.21
3.48
0.48
0.08
mm
MAX
5.72
3.61
0.711
---
A
B
C
PAD LAYOUT
INCHES
0.288
0.070
0.155
mm
7.32
1.78
3.94
1N5807CBUS–1N5811CBUS
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
Copyright
©
2007
7-26-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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