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1N5807US_09

产品描述3 A, SILICON, RECTIFIER DIODE, DO-214AA
产品类别半导体    分立半导体   
文件大小130KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
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1N5807US_09概述

3 A, SILICON, RECTIFIER DIODE, DO-214AA

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1N5807US thru 1N5811US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using
an internal “Category I” metallurgical bond. These devices are also available in axial-
leaded package configurations (see separate data sheet for 1N5807 thru 1N5811).
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “E”
or D-5B
FEATURES
Surface mount package series equivalent to the
JEDEC registered 1N5807 to 1N5811 series
Voidless-hermetically-sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
I”
Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/477
Axial-leaded equivalents also available (see separate
data sheet for 1N5807 thru 1N5811)
APPLICATIONS / BENEFITS
Ultrafast recovery 6 Amp rectifiers series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Operating Temperature: -65
o
C to +175
o
C.
Storage Temperature: -65
o
C to +175
o
C.
Average Rectified Forward Current (I
O
): 6 Amps @
T
EC
= 75ºC End Cap temperature (see note 1)
Thermal Resistance: 6.5 ºC/W junction to end cap
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
1N5807US
1N5809US
50
100
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
V
BR
VOLTS
60
110
AVERAGE
RECTIFIED
CURRENT
I
O1
@T
EC
=75
º
C
(Note 1)
AMPS
6.0
6.0
AVERAGE
RECTIFIED
CURRENT
I
O2
@T
A
=55
º
C
(Note 2)
AMPS
3.0
3.0
MAXIMUM
FORWARD
VOLTAGE
@4A
(8.3 ms pulse)
V
F
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
AMPS
125
125
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
ns
30
30
TYPE
1N5807US–1N5811US
VOLTS
μA
o
o
o
o
25 C
100 C 25 C 125 C
525
5
0.800
0.875
0.875
0.800
5
525
30
125
525
5
0.800
0.875
3.0
6.0
160
150
1N5811US
NOTE 1:
Rated at T
EC
= 75ºC. Derate at 60 mA/ºC for T
EC
above 75ºC
NOTE 2:
Derate linearly at 25 mA/ºC above T
A
= 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
J(max)
does not exceed 175ºC
o
NOTE 3:
T
A
= 25 C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4:
I
F
= 1.0 A, I
RM
= 1.0 A,
I
R(REC)
= 0.10 A and di/dt = 100 A/µs min
Copyright
©
2009
8-03-2009 REV F; SD42A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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