1N5802US thru 1N5806US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. They are also available in axial-
leaded package configurations for thru-hole mounting (see separate data sheet for
1N5802 thru 1N5806). Microsemi also offers numerous other rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and surface
mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “A”
or D-5A
FEATURES
•
Surface mount package series equivalent to the JEDEC
registered 1N5802 to 1N5806 series
•
Voidless hermetically sealed glass package
•
Extremely robust construction
•
Triple-layer passivation
•
Internal “Category
I”
Metallurgical bonds
•
JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
•
Axial-leaded equivalents available (see 1N5802 thru 1N5806)
APPLICATIONS / BENEFITS
•
Ultrafast recovery 2.5 Amp rectifier series 50 to 150 V
•
Military and other high-reliability applications
•
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
•
High forward surge current capability
•
Low thermal resistance
•
Controlled avalanche with peak reverse power
capability
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
•
•
•
•
•
•
•
Junction Temperature: -65
o
C to +175
o
C
Storage Temperature: -65
o
C to +175
o
C
Average Rectified Forward Current (I
O
): 2.5 A @ T
EC
= 75ºC
Thermal Resistance: 13 ºC/W junction to end cap
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Forward Surge Current: 35 Amps @ 8.3 ms half-sine
Capacitance: 25 pF @ V
R
= 10 Volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
•
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
•
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
•
MARKING and POLARITY: Cathode band only
•
Tape & Reel option: Standard per EIA-481-B
•
Weight: 193 mg
•
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
V
BR
VOLTS
AVERAGE
RECTIFIED
CURRENT
I
O1
@
T
EC
=+75ºC
(NOTE 1)
AMPS
AVERAGE
RECTIFIED
CURRENT
I
O2
@
T
A
=+55ºC
(Note 2)
AMPS
MAXIMUM
FORWARD
VOLTAGE
@1A
(8.3 ms pulse)
V
F
VOLTS
o
25 C
100 C
0.875
0.800
o
TYPE
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
μA
o
25 C 125 C
1
175
1
175
1
175
1
175
1
175
o
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
AMPS
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
ns
25
25
25
25
25
1N5802US – 1N5806US
1N5802US
50
55
2.5
1.0
35
1N5803US
75
80
2.5
1.0
35
1N5804US
100
110
2.5
1.0
0.875
0.800
35
1N5805US
125
135
2.5
1.0
35
1N5806US
150
160
2.5
1.0
0.875
0.800
35
NOTE 1:
I
O1
is rated at 2.5 A @ T
EC
= 75º. Derate at 50 mA/ºC for T
EC
above 125ºC.
NOTE 2:
I
O2
is rated at 1.0 A @ T
A
= 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
J(max)
does not exceed 175ºC. Derate at 8.33 mA/ºC for T
A
above 55ºC.
o
NOTE 3:
T
A
= 25 C @ I
O
= 1.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4:
I
F
= 0.5 A, I
RM
= 0.5 A, I
R(REC)
= .05 A
Copyright
©
2009
10-06-2009 REV C; SD41A.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5802US thru 1N5806US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
Symbol
V
BR
V
RWM
I
O
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range
Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing
from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse
current occurs.
WWW .
Microsemi
.C
OM
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
been identified as “D-5A”
INCHES
MIN
BD
BL
ECT
S
.097
.185
.019
.003
MAX
.103
.200
.028
---
MIN
2.46
4.70
0.48
0.08
mm
MAX
2.62
5.08
0.71
---
A
B
C
PAD LAYOUT
INCHES
0.246
0.067
0.105
mm
6.25
1.70
2.67
1N5802US – 1N5806US
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
Copyright
©
2009
10-06-2009 REV C; SD41A.pdf
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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