电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

USB50415C

产品描述500 W, BIDIRECTIONAL, SILICON, TVS DIODE
产品类别分立半导体    二极管   
文件大小81KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

USB50415C概述

500 W, BIDIRECTIONAL, SILICON, TVS DIODE

USB50415C规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
包装说明PLASTIC PACKAGE-4
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性ULTRA LOW CAPACITANCE
最小击穿电压16.7 V
击穿电压标称值16.7 V
配置COMMON BIPOLAR TERMINAL, 2 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G4
JESD-609代码e0
最大非重复峰值反向功率耗散500 W
元件数量2
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大重复峰值反向电压15 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
USB50403C thru USB50424C, e3
Bidirectional TVSarray ™
SCOTTSDALE DIVISION
DESCRIPTION
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) is packaged in an SOT-143
configuration giving protection to 1 Bidirectional data or interface line. It is designed
for use in applications where protection is required at the board level from voltage
transients caused by electrostatic discharge (ESD) as defined in IEC 61000–4-2,
electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning.
It is also available with either Tin-Lead plated terminations or as RoHS Compliant
with annealed matte-Tin finish by adding an “e3” suffix to the part number*.
These TVS arrays have a peak power rating of 500 watts for an 8/20
μsec
pulse.
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors,
UNIVERSAL SERIAL BUS
(USB)
and I/O transceivers. The USB504xxC product provides board level
protection from static electricity and other induced voltage surges that can damage
or upset sensitive circuitry.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
SOT–143
FEATURES
Protects 1 bidirectional line
Surge protection per IEC 61000-4-2, IEC 61000-4-4
Provides electrically isolated protection
UL 94V-0 Flamability Classification
RoHS Compliant devices available by adding e3 suffix
ULTRA LOW CAPACITANCE 3 pF per line pair
ULTRA LOW LEAKAGE
APPLICATIONS / BENEFITS
EIA-RS485 data rates:
5 Mbs
10 Base T Ethernet
USB date rate: 900 Mbs
Tape & Reel per EIA Standard 481-1-A
7 inch reel; 3,000 pieces per reel
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)
Pulse Repetition Rate: < .01%
MECHANICAL AND PACKAGING
Molded SOT-143 Surface Mount
Weight: 0.035 grams (approximate)
Body marked with device marking code* (see below)
Pin #1 defined by dot on top of package
ELECTRICAL CHARACTERISTICS
STAND OFF
VOLTAGE
V
WM
VOLTS
MAX
USB50403C
USB50405C
USB50412C
USB50415C
USB50424C
53
55
512
515
524
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure 2)
VOLTS
MAX
8
10.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure 2)
VOLTS
MAX
11
13
26
32
57
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
200
40
1
1
1
CAPACITANCE
(f=1 MHz)
C
@0V
pF
MAX
3
3
3
3
3
TEMPERATURE
COEFFICIENT
OF V
BR
α
VBR
mV/°C
MAX
-5
1
8
11
28
PART
NUMBER
DEVICE
MARKING
*
USB504xxC, e3
*Device
marking has an e3 suffix added for the RoHS Compliant option, e.g. 53e3, 55e3, 512e3, 515e3, and 524e3.
Copyright
©
2005
6-28-2005 REV K
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

USB50415C相似产品对比

USB50415C USB50403C USB50403CE3 USB50405C USB50405CE3 USB50403C_1 USB50424C USB50412C
描述 500 W, BIDIRECTIONAL, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
是否无铅 含铅 含铅 不含铅 含铅 不含铅 - - 含铅
是否Rohs认证 不符合 不符合 符合 不符合 符合 - - 不符合
厂商名称 Microsemi Microsemi Microsemi Microsemi Microsemi - - Microsemi
包装说明 PLASTIC PACKAGE-4 R-PDSO-G4 R-PDSO-G4 PLASTIC PACKAGE-4 R-PDSO-G4 - - PLASTIC PACKAGE-4
Reach Compliance Code unknown _compli compli unknow compli - - unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 - - EAR99
其他特性 ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE - - ULTRA LOW CAPACITANCE
最小击穿电压 16.7 V 4 V 4 V 6 V 6 V - - 13.3 V
配置 COMMON BIPOLAR TERMINAL, 2 ELEMENTS COMMON BIPOLAR TERMINAL, 2 ELEMENTS COMMON BIPOLAR TERMINAL, 2 ELEMENTS COMMON BIPOLAR TERMINAL, 2 ELEMENTS COMMON BIPOLAR TERMINAL, 2 ELEMENTS - - COMMON BIPOLAR TERMINAL, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON - - SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE - - TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 - - R-PDSO-G4
JESD-609代码 e0 e0 e3 e0 e3 - - e0
最大非重复峰值反向功率耗散 500 W 500 W 500 W 500 W 500 W - - 500 W
元件数量 2 2 2 2 2 - - 2
端子数量 4 4 4 4 4 - - 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C - - 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C - - -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
极性 BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL - - BIDIRECTIONAL
最大重复峰值反向电压 15 V 3.3 V 3.3 V 5 V 5 V - - 12 V
表面贴装 YES YES YES YES YES - - YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE - - AVALANCHE
端子面层 TIN LEAD Tin/Lead (Sn/Pb) MATTE TIN TIN LEAD Matte Tin (Sn) - - TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING - - GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL - - DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
场效应管的简单测试方法
场效应管种类众多,下面以SPP20N60C3管为例,它是英飞凌Cool MOS管,600V20A0.19Ω。 首先,要特别注意,不要用手或可能带有静电的物品接触管脚,特别是G脚,可以一手拿住管体,一手 ......
arui1999 下载中心专版
使用Verilog实现基于FPGA的SDRAM控制器
摘 要:介绍了SDRAM的特点和工作原理,提出了一种基于FPGA的SDRAM控制器的设计方法,使用该方法实现的控制器可非常方便地对SDRAM进行控制。 关键词:SDRAM;控制器;Verilog;状态机 引言 ......
maker FPGA/CPLD
下一代电池监控器:如何在提高精度和延长运行时间的同时提高电池的安全性
近年来,诸如吸尘器、电动工具(如钻头、锯子和螺丝刀)和园艺工具(如割草机、修边机和草坪拖拉机)等消费品已从依靠绳索和墙壁供电转变为无绳设备和充电电池供电。即使是以前没有动力的自行车 ......
alan000345 TI技术论坛
【兆易GD32F310测评】+初品GD32F310开发板
本帖最后由 jinglixixi 于 2022-5-3 21:27 编辑 赶在五一前,GD32F310开发板就被寄到了,实在是一件快事,其外观如图1所示。 该开发板所用的MCU是GD32F310G8T6,是一款32引脚的芯片,若不 ......
jinglixixi GD32 MCU
EVC如何直接调试到设备(windows mobile 5.0)
使用EVC3.O,Activesync4.0打开并连接。 如何设置Debug到设备上? 我的总是提示The Platform Manager server is not available 在工具下测试Pocker PC (Default Device),选择Activesync,没 ......
yil_zy 嵌入式系统
电路欣赏-------0V起调线性电源
本帖最后由 dontium 于 2015-1-23 11:12 编辑 (图片未校对) 95944 谢谢你顶帖! 本帖最后由 dontium 于 2012-9-12 18:09 编辑 ] ...
dontium 模拟与混合信号

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1099  119  375  42  369  22  46  33  8  51 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved