Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSG200EF60E
200 AMP
N-CHANNEL IGBT
WITH ANTI-PARALLEL DIODE
600 VOLTS
Features:
•
•
•
•
•
•
•
Outstanding current capability
Low on-state conductive losses
Very simple gate drive design
Improved SOA characterization
Low input capacitance
High reverse voltage rating available
TX, TXV, S-Level screening available
SYMBOL
V
CES
V
GES
@ T
C
= 25ºC
@ T
C
= 90ºC
I
C1
I
C2
I
CM
I
LM
E
ARV
T
OP
& T
STG
R
0JC
P
D1
P
D2
VALUE
600
±20
200
100
300
100
5.6
-55 to +150
0.20
625
5
Milpack 3
UNIT
V
V
A
A
A
mJ
ºC
ºC/W
W
W/ºC
DESIGNER’S DATA SHEET
Part Number/Ordering Information
1/
SSG200EF60E
___
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
MAXIMUM RATINGS
3/
Collector – Emitter Breakdown Voltage
Gate – Emitter Voltage
Max. Continuous Collector Current
Pulsed Collector Current
4/
Clamped Inductive Load Current
(T
J
= 125ºC)
5/
Reverse Voltage Avalanche Energy
(I
C
= 100A)
4/
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Total Device Dissipation @ T
C
= 25ºC
Dissipation Derating From @ T
C
= 25ºC to T
C
= 150ºC
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25 C.
4/ Pulse duration limited by TJmax; repetitive rating.
5/ VCC=80% rated BVCES, VGE=15V, L=30uH, RG=10Ω.
o
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: G00003B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSG200EF60E
SYMBOL
BV
CES
VGE
(th)
I
C
= 100A @ 25 C
o
I
C
= 100A @ 100 C
o
ELECTRICAL CHARACTERISTICS
3/
MIN
600
2.5
––
––
––
––
––
––
40
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
TYP
––
5.5
1.65
1.8
0.01
10
40
4
––
575
70
320
MAX
––
6
2.0
2.4
1.0
––
200
10
––
650
150
370
UNIT
V
V
V
μA
μA
μA
mA
S
Collector - Emitter Breakdown Voltage
(I
CES
= 250μA, V
GE
= 0V)
Gate - Emitter Threshold Voltage
(I
C
= 5mA, V
CE
= V
GE
)
Collector - Emitter Saturation Voltage
Gate - Emitter Leakage Current
(V
GE
= ±20V, V
CE
= 0V)
Collector Leakage Current
o
(V
CE
= 480 V, V
GE
= 0V, T
j
= 25 C)
o
(V
CE
= 600 V, V
GE
= 0V, T
j
= 25 C)
o
(V
CE
= 480 V, V
GE
= 0V, T
j
= 125 C)
Forward Transconductance
(I
C
= I
C2
, V
CE
= 10V)
Gate Charge
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
ANTI-PARALLEL DIODE
Peak Current
Peak Inverse Voltage
Average Current
Diode Forward Voltage @ IF=100A, TJ=25 C
Reverse Recovery Time
(If=40A, di/dt=200A/µsec)
o
VCE
(sat)
I
GES
I
CES1
I
CES2
I
CES3
g
fs
V
GE
= 15V
I
C
= 10A
V
CE
= 300V
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
V
GE
= 15V
I
C
= 45A
R
G
= 10Ω
L = 100µH
Q
g(on)
Q
ge
Q
gc
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
I
pk
PIV
I
avg
VF
trr
nC
8400 15,000
1400 2,000
600 1,000
150
140
600
300
––
––
––
1.1
200
500
175
1000
500
200
600
100
1.5
400
pF
nsec
A
V
A
V
nsec
PACKAGE OUTLINE: MILPACK3
PIN OUT:
PIN 1: COLLECTOR
PIN 2: EMITTER
PIN 3: GATE
PIN 4: EMITTER
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: G00003B
DOC
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