GaAs Multiplier Diodes
TM
®
Frequency Multiplier
MV71001 – MV71013
Features
●
●
●
High Efficiency
Low Parasitic Packages
Low Thermal Resistance
Applications
●
●
●
●
High-Power mmW Transceivers
mmW Phase Arrays
Drivers for Power Amplifiers
Frequency Multipliers to 110 GHz and
Beyond
Description
Microsemi’s GaAs frequency multiplier diodes are
fabricated from epitaxial layers grown at using
Chemical Vapor Deposition. The layers are processed at
using proprietary techniques resulting in high Q factor
and repeatable tuning curves. The diodes are available
in a variety of microwave ceramic packages or chips for
operation from UHF to mmW frequencies.
Specifications @ 25°C
Part
Number
MV71001
MV71002
MV71003
MV71004
MV71005
MV71006
MV71007
MV71008
MV71009
MV71010
MV71011
MV71012
MV71013
1
2
C
J
@ 0 V
± 10%
(pF)
1, 3, 4
0.2
0.3
0.4
0.5
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
Typ.
5
C
T
@ 0 V
C
T
@ V
BR
2.1
2.4
2.6
2.8
2.8
3.1
3.4
3.6
3.7
3.8
3.9
4.0
4.2
Min.
V
BR
@
10
A (V)
15
15
15
15
30
30
30
30
30
30
30
30
30
Typ.
Q @ -4 V
2
8000
8000
7500
7000
8000
7500
7000
6500
6000
6000
5700
5700
5000
Maximum Ratings
Reverse Voltage
Forward Current
Incident Power
Operating Temperature
Storage Temperature
Breakdown Voltage
50 mA @ 25°C
+23 dBm @ 25°C
-55°C to +175°C
-55°C to +200°C
Capacitance is specified at 1 MHz.
Measured by DeLoach Technique and referenced to 50 MHz.
3
Tightened tolerances available upon request.
4
Package capacitance are not included in above specifications.
5
Capacitance ratio is calculated using C
P
= 0.15 pF. Ratios will vary
depending upon case style selection.
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
1
The MV71000 Series of products are
supplied with a RoHS complaint Gold finish
.
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
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