GaAs Varactor Diodes
Hyperabrupt
TM
®
MV30011 – MV34010
Features
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High Q Values for Higher Frequency Performance
Large Tuning Ratios
Low Reverse Current
Gamma Values to 1.5
Available as Bondable Chips and as
Packaged Diodes
Available in Chip-on-Board Packaging
Custom Designs Available
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Applications
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Description
Microsemi’s GaAs hyperabrupt junction varactor
diodes are fabricated from epitaxial layers grown
at Microsemi by the Chemical Vapor Deposition
technique. The layers are processed at using
proprietary techniques resulting in varactors with
constant gamma, high Q factor and repeatable
tuning curves. These varactors are available in a
variety of microwave ceramic packages or
bondable chips for operation from UHF to
millimeter wave frequencies.
Breakdown Voltage
50 mA @ 25°C
+20 dBm @ 25°C
-55°C to +175°C
-55°C to +200°C
VCOs
Phase-Locked Oscillators
High Q Tunable Filters
Phase Shifters
Pre-Selectors
Maximum Ratings
Reverse Voltage
Forward Current
Incident Power
Operating Temperature
Storage Temperature
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
1
The MS3000 Series of products are
supplied with a RoHS complaint Gold finish
.
Copyright
2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page
1
GaAs Varactor Diodes
Hyperabrupt
TM
®
MV30011 – MV34010
Gamma = 1.25
High Q Constant Gamma Tuning Varactors (Specifications @ 25°C)
Gamma = 0.75
Part
Number
MV32001
MV32002
MV32003
MV32004
MV32005
MV32006
MV32007
MV32008
MV32009
MV32010
C
T
@ 4 V
± 10%
(pF)
1, 3, 4
0.6
1.0
1.2
1.5
1.8
2.2
2.5
3.0
3.6
4.5
Typ.
C
T
@2V /
C
T
@20V
5
2.8
3.1
3.2
3.3
3.4
3.5
3.6
3.6
3.7
3.8
Min.
V
BR
@
10
A (V)
22
22
22
22
22
22
22
22
22
22
Typ.
Q @ -4 V
2
4000
3000
3000
3000
3000
3000
2500
2500
2000
1500
Part
Number
MV31001
MV31002
MV31003
MV31004
MV31005
MV31006
MV31007
MV31008
MV31009
MV31010
C
T
@4V
± 10%
(pF)
1, 3, 4
0.6
1.0
1.2
1.5
1.8
2.2
2.5
3.0
3.6
4.5
C
T
@4 V
± 10%
(pF)
1, 3, 4
0.5
0.7
1.0
1.2
1.5
1.8
2.0
2.2
2.7
3.3
3.7
4.7
5.6
6.8
8.2
10.0
Typ.
C
T
@2V /
C
T
@12V
5
4.2
5.1
5.4
5.7
5.9
6.2
6.3
6.5
6.7
6.8
Typ.
C
T
@2V /
C
T
@20V
5
5.5
6.5
7.7
8.3
9.1
9.6
9.9
10.2
10.8
11.3
11.5
12.0
12.3
12.6
12.9
13.1
Min.
V
BR
@
10
A (V)
15
15
15
15
15
15
15
15
15
15
Min.
V
BR
@
10
A (V)
22
22
22
22
22
22
22
22
22
22
22
22
22
22
22
22
Typ.
Q @ -4 V
2
4000
3000
3000
3000
3000
3000
2000
2000
2000
1500
Gamma = 1.00
Part
Number
MV30001
MV30002
MV30003
MV30004
MV30005
MV30006
MV30007
MV30008
MV30009
MV30010
C
T
@4 V
± 10%
(pF)
1, 3, 4
0.6
1.0
1.2
1.5
1.8
2.2
2.5
3.0
3.6
4.5
C
T
@4 V
± 10%
(pF)
1, 3, 4
0.6
1.0
1.2
1.5
1.8
2.2
2.5
3.0
3.6
4.5
Typ.
C
T
@2V /
C
T
@12V
5
3.2
3.7
3.8
4.0
4.1
4.2
4.3
4.4
4.5
4.5
Typ.
C
T
@2V /
C
T
@20V
5
3.9
4.6
4.9
5.2
5.4
5.6
5.8
6.0
6.1
6.3
Min.
V
BR
@
10
A (V)
15
15
15
15
15
15
15
15
15
15
Min.
V
BR
@
10
A (V)
22
22
22
22
22
22
22
22
22
22
Typ.
Q @ -4V
2
4000
3000
3000
3000
3000
3000
2500
2500
2000
1500
Part
Number
MV31011
MV31012
MV31013
MV31014
MV31015
MV31016
MV31017
MV31018
MV31019
MV31020
MV31021
MV31022
MV31023
Typ.
Q @ -4V
2
4000
3000
3000
3000
3000
3000
2500
2500
2000
1500
MV31024
MV31025
MV31026
Typ.
Q @ -4V
2
4000
4000
3000
3000
3000
3000
3000
3000
2000
2000
2000
1500
1500
1500
1500
1500
Part
Number
MV30011
MV30012
MV30013
MV30014
MV30015
MV30016
MV30017
MV30018
MV30019
MV30020
Capacitance is specified at 1 MHz.
Measured by DeLoach Technique and referenced to 50 MHz.
3
Tightened tolerances available upon request.
4
Package capacitance is 0.15 pF is included in the above specification.
5
The capacitance ratio is calculated using C
P
= 0.15 pF. Ratios will vary
depending upon package selection.
1
2
Copyright
2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page
2
GaAs Varactor Diodes
Hyperabrupt
TM
®
MV30011 – MV34010
High Q Constant Gamma Tuning Varactors (Specifications @ 25°)
Gamma = 1.50
Part
Number
MV34001
MV34002
MV34003
MV34004
MV34005
MV34006
MV34007
MV34008
MV34009
MV34010
C
T
@ 4 V
± 10%
(pF)
1, 3, 4
0.5
1.0
1.8
2.8
2.2
2.5
3.0
3.8
4.5
10.0
Typ.
C
T
@ 2 V
C
T
@ 12V
5
4.5
5.9
7.1
7.3
7.4
7.6
7.9
8.1
8.3
8.9
Min.
V
BR
@
10
A (V)
15
15
15
15
15
15
15
15
15
15
Typ.
Q @ -4 V
2
3000
2500
2500
2500
1800
1800
1800
1800
1200
1200
Capacitance is specified at 1 MHz.
Measured by DeLoach Technique and referenced to 50 MHz.
3
Tightened tolerances available upon request.
4
Package capacitance is 0.15 pF is included in the above specification.
5
The capacitance ratio is calculated using C
P
= 0.15 pF. Ratios will vary
depending upon package selection.
1
2
Copyright
2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page
3
GaAs Varactor Diodes
Hyperabrupt
TM
®
MV30011 – MV34010
Copyright
2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page
4
NXP MCU
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