GaAs Varactor Diodes
TM
®
Abrupt Junction
MV20001 – MV21010
Features
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High Q Values for Higher Frequency Performance
Constant Gamma Design
Low Reverse Current
Available as Chip or Packaged Diodes
Available in Chip-on-Board Packaging
Custom Designs Available
Applications
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VCOs
Phase-Locked Oscillators
High Q Tunable Filters
Phase Shifters
Pre-Selectors
Description
Microsemi’s GaAs abrupt junction varactors are
fabricated from epitaxial layers grown at
Microsemi using Chemical Vapor Deposition. The
layers are processed using proprietary techniques
resulting in a high Q factor and very repeatable
tuning curves. The diodes are available in a variety
of microwave ceramic packages or chips for
operation from UHF to millimeter wave
frequencies.
Breakdown Voltage
50 mA @ 25°C
+20 dBm @ 25°C
-55°C to +175°C
-55°C to +200°C
Maximum Ratings
Reverse Voltage
Forward Current
Incident Power
Operating Temperature
Storage Temperature
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
1
The MV20000 Series of products are
supplied with a RoHS complaint Gold finish
.
Copyright
2008
Rev: 2009-05-11
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GaAs Varactor Diodes
TM
®
Abrupt Junction
MV20001 – MV21010
Specifications @ 25°C
Gamma = 0.5
Part
Number
MV20001
MV20002
MV20003
MV20004
MV20005
MV20006
MV20007
MV20008
MV20009
MV20010
MV21001
MV21002
MV21003
MV21004
MV21005
MV21006
MV21007
MV21008
MV21009
MV21010
1
2
C
T
@ 4 V
± 10%
(pF)
1, 3, 4
0.3
0.4
0.5
0.6
0.8
1.0
1.2
1.5
1.8
2.2
0.3
0.4
0.5
0.6
0.8
1.0
1.2
1.5
1.8
2.2
Typ.
C
T
@ 0 V
C
T
@ V
BR
5
2.4
2.6
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.4
2.8
3.1
3.4
3.6
3.8
4.0
4.2
4.3
4.5
4.6
Min.
V
BR
@
10
A (V)
15
15
15
15
15
15
15
15
15
15
30
30
30
30
30
30
30
30
30
30
Typ.
Q @ -4 V
2
8000
7500
7000
6500
6000
5700
5000
5000
5000
4000
8000
7500
7000
6500
6000
5700
5000
5000
5000
4000
Typical Characteristics
Capacitance is specified at 1 MHz.
Measured by DeLoach Technique and referenced to 50 MHz.
3
Tightened tolerances available upon request.
4
Package capacitance of 0.15 pF is included in the above specification.
5
The capacitance ratio is calculated using C
P
= 0.15 pF. Ratios will vary
depending upon package selection.
Copyright
2008
Rev: 2009-05-11
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
FPGA/CPLD
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