HGTP3N60C3D, HGT1S3N60C3DS
Data Sheet
January 2000
File Number
4140.2
6A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diodes
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
Formerly Developmental Type TA49119.
Features
• 6A, 600V at T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .130ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
Ordering Information
PART NUMBER
HGTP3N60C3D
HGT1S3N60C3DS
PACKAGE
TO-220AB
TO-263AB
BRAND
G3N60C3D
G3N60C3D
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60C3DS9A.
Symbol
C
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTP3N60C3D, HGT1S3N60C3DS Rev. A
HGTP3N60C3D, HGT1S3N60C3DS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP3N60C3D, HGT1S3N60C3DS
600
6
3
24
±
20
±
30
18A at 480V
33
0.27
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/
o
C
o
C
o
C
µ
s
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .t
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82
Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
I
C
= 250
µ
A,
V
CE
= V
GE
V
GE
=
±
25V
T
J
= 150
o
C
R
G
= 82
Ω
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
V
CE(PK)
= 600V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
MIN
600
-
-
-
-
3.0
-
18
2
TYP
-
-
-
1.65
1.85
5.5
-
-
-
MAX
-
250
2.0
2.0
2.2
6.0
±
250
-
-
UNITS
V
µ
A
mA
V
V
V
nA
A
A
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
NOTE:
V
GEP
Q
G(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
RR
R
θ
JC
I
C
= I
C110
, V
CE
= 0.5 BV
CES
IC = IC110,
VCE = 0.5 BVCES
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
Ω
L = 1mH
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.3
10.8
13.8
5
10
325
130
85
245
2.0
22
17
-
-
-
13.5
17.3
-
-
400
275
-
-
2.5
28
22
3.75
3.0
V
nC
nC
ns
ns
ns
ns
µ
J
µ
J
V
ns
ns
o
C/W
o
C/W
I
EC
= 3A
I
EC
= 3A, dI
EC
/dt = 200A/
µ
s
I
EC
= 1A, dI
EC
/dt = 200A/
µ
s
IGBT
Diode
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP3N60C3D and HGT1S3N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
©2001 Fairchild Semiconductor Corporation
HGTP3N60C3D, HGT1S3N60C3DS Rev. A
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
4
6
8
10
12
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%
T
C
= 25
o
C
16
14
12
10
8
6
4
2
0
0
2
4
6
8
9.0V
8.5V
8.0V
7.5V
7.0V
10
V
GE
= 15V
12V
10V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 10V
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, V
GE
= 15V
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
T
C
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µS)
I
CE
, DC COLLECTOR CURRENT (A)
V
GE
= 15V
V
CE
= 360V, R
G
= 82Ω, T
J
= 125
o
C
6
5
4
3
2
1
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
12
10
t
SC
8
I
SC
6
4
2
0
10
11
12
13
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
50
40
30
20
10
0
15
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTP3N60C3D, HGT1S3N60C3DS Rev. A
I
SC
, PEAK SHORT CIRCUIT CURRENT(A)
7
14
70
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
t
d(ON)I
, TURN-ON DELAY TIME (ns)
(Continued)
500
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
400
V
GE
= 10V
10
300
V
GE
= 15V
V
GE
= 15V
V
GE
= 10V
200
1
2
3
4
5
6
7
8
3
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
80
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
t
rI
, TURN-ON RISE TIME (ns)
V
GE
= 10V
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
t
fI
, FALL TIME (ns)
200
V
GE
= 10V or 15V
V
GE
= 15V
10
5
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
0.5
E
ON
, TURN-ON ENERGY LOSS (mJ)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
0.8
0.7
0.6
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
0.4
V
GE
= 10V
0.3
V
GE
= 10V or 15V
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0.2
V
GE
= 15V
0.1
0
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP3N60C3D, HGT1S3N60C3DS Rev. A
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
100
200
300
400
500
600
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82Ω, L = 1mH
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82Ω, L = 1mH
100
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 3.75
o
C/W
10
1
2
3
V
GE
= 15V
V
GE
= 10V
4
5
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
500
FREQUENCY = 1MHz
400
C, CAPACITANCE (pF)
C
IES
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
600
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
480
12
300
360
V
CE
= 600V
240
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1.060mA
R
L
= 200Ω
T
C
= 25
o
C
0
2
4
6
8
10
12
14
9
200
6
100
C
OES
C
RES
120
3
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0
Q
G
, GATE CHARGE (nC)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
P
D
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
©2001 Fairchild Semiconductor Corporation
HGTP3N60C3D, HGT1S3N60C3DS Rev. A
分立器件
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
