CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 3mA, V
GE
= 0V
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
MIN
600
16
-
-
-
-
3.0
-
V
CE(PK)
= 480V
V
CE(PK)
= 600V
18
2
-
-
-
-
-
-
-
-
-
-
TYP
-
30
-
-
1.65
1.85
5.5
-
-
-
8.3
10.8
13.8
5
10
325
130
85
245
-
MAX
-
-
250
2.0
2.0
2.2
6.0
±250
-
-
-
13.5
17.3
-
-
400
275
-
-
3.75
UNITS
V
V
µA
mA
V
V
V
nA
A
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
o
C/W
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
T
C
= 150
o
C
I
C
= 250µA, V
CE
= V
GE
T
C
= 25
o
C
V
GE
=
±25V
T
J
= 150
o
C,
R
G
= 82Ω,
V
GE
= 15V, L = 1mH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
g(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θJC
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82Ω
L = 1mH
Test Circuit (Figure 18)
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
2
HGTD3N60C3S, HGTP3N60C3
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
4
6
8
10
12
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
9.0V
8.5V
8.0V
7.5V
7.0V
10
10V
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= 25
o
C
V
GE
= 15V
12V
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= -40
o
C
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= -40
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= 25
o
C
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µS)
I
CE
, DC COLLECTOR CURRENT (A)
V
GE
= 15V
14
12
10
6
5
4
3
2
1
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
V
CE
= 360V, R
G
= 82Ω, T
J
= 125
o
C
70
60
50
t
SC
8
I
SC
6
4
2
0
10
11
12
13
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
30
20
10
0
15
40
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
7
HGTD3N60C3S, HGTP3N60C3
Typical Performance Curves
20
t
d(ON)I
, TURN-ON DELAY TIME (ns)
(Continued)
500
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
400
V
GE
= 10V
10
300
V
GE
= 15V
V
GE
= 15V
V
GE
= 10V
200
1
2
3
4
5
6
7
8
3
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
80
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
t
fI
, FALL TIME (ns)
300
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
t
rI
, TURN-ON RISE TIME (ns)
200
V
GE
= 10V OR 15V
V
GE
= 15V
10
5
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
0.5
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
E
ON
, TURN-ON ENERGY LOSS (mJ)
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
0.4
V
GE
= 10V
0.3
0.8
0.7
0.6
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V or 15V
0.5
0.4
0.3
0.2
0.1
0
0.2
V
GE
= 15V
0.1
0
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGTD3N60C3S, HGTP3N60C3
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
100
200
300
400
500
600
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82Ω, L = 1mH
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82Ω, L = 1mH
100
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
10
1
R
θJC
= 3.75
o
C/W
2
3
V
GE
= 15V
V
GE
= 10V
4
5
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
500
FREQUENCY = 1MHz
400
C, CAPACITANCE (pF)
C
IES
480
12
300
360
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
9
200
C
OES
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
240
6
100
120
I
G
REF = 1.060mA,
R
L
= 200Ω, T
C
= 25
o
C
0
2
4
6
8
10
12
14
3
0
Q
g
, GATE CHARGE (nC)
0
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Z
θJC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-2
10
-5
10
-4
10
-3
10
-2
P
D
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-1
10
0
10
1
t
1
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
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