HGTG40N60B3
Data Sheet
November 2004
File Number
70A, 600V, UFS Series N-Channel IGBT
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49052.
Features
• 70A, 600V, T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
HGTG40N60B3
PACKAGE
TO-247
BRAND
G40N60B3
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
HGTG40N60B3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG40N60B3
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
70
40
330
±20
±30
100A at 600V
290
2.33
100
-55 to 150
260
2
10
W
W/
o
C
mJ
o
C
o
C
UNITS
V
600
A
A
A
V
V
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 3Ω.
S
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= -10mA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
MIN
600
20
-
-
-
-
3.0
-
V
CE
= 480V
V
CE
= 600V
200
100
TYP
-
-
-
-
1.4
1.5
4.8
-
-
-
MAX
-
-
100
6.0
2.0
2.3
6.0
±100
-
-
UNITS
V
V
µA
mA
V
V
V
nA
A
A
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
I
C
= 250µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C
R
G
= 3Ω
V
GE
= 15V
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
7.5
250
335
47
35
170
50
1050
800
-
330
435
-
-
200
100
1200
1400
V
nC
nC
ns
ns
ns
ns
µJ
µJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 1)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
IGBT and Diode Both at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3Ω
L = 100µH
Test Circuit (Figure 17)
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
HGTG40N60B3
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 1)
Thermal Resistance Junction To Case
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode Both at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3Ω
L = 100µH
Test Circuit (Figure 17)
MIN
-
-
-
-
-
-
-
TYP
47
35
285
100
1850
2000
-
MAX
-
-
375
175
-
-
0.43
UNITS
ns
ns
ns
ns
µJ
µJ
o
C/W
Typical Performance Curves
100
I
CE
, DC COLLECTOR CURRENT (A)
(Unless Otherwise Specified)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 15V
80
250
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V
200
60
PACKAGE LIMITED
40
150
100
20
50
0
25
50
75
100
125
150
0
0
100
200
300
400
500
600
700
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
100
T
C
75
o
C
75
o
C
110
o
C
110
o
C
V
GE
15V
10V
15V
10V
V
CE
= 360V, R
G
= 3Ω, T
J
= 125
o
C
16
14
12
10
8
6
4
10
t
SC
I
SC
800
700
600
500
400
300
200
15
10
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.43
o
C/W, SEE NOTES
1
10
20
40
60
80
100
11
12
13
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
f
MAX
, OPERATING FREQUENCY (kHz)
T
J
= 150
o
C, R
G
= 3Ω, L = 100µH, V
CE
= 480V
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
18
900
HGTG40N60B3
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
200
DUTY CYCLE <0.5%, V
GE
= 10V
PULSE DURATION = 250µs
150
T
C
= -55
o
C
(Unless Otherwise Specified)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
200
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
150
T
C
= -55
o
C
T
C
= 150
o
C
100
T
C
= 25
o
C
T
C
= 150
o
C
100
T
C
= 25
o
C
50
50
0
0
1
2
3
4
5
0
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
20
E
ON
, TURN-ON ENERGY LOSS (mJ)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
R
G
= 3Ω, L = 100µH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V
T
J
= 150
o
C, V
GE
= 10V
8
R
G
= 3Ω, L = 100µH, V
CE
= 480V
16
6
T
J
= 150
o
C; V
GE
= 10V AND 15V
12
8
T
J
= 150
o
C, V
GE
= 15V
4
2
T
J
= 25
o
C; V
GE
= 10V AND 15V
0
20
40
60
80
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
4
T
J
= 25
o
C, V
GE
= 15V
0
20
40
60
80
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
90
R
G
= 3Ω, L = 100µH, V
CE
= 480V
t
dI
, TURN-ON DELAY TIME (ns)
80
70
60
T
J
= 25
o
C, V
GE
= 15V
50
40
30
20
40
60
80
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, V
GE
= 15V
t
rI
, RISE TIME (ns)
T
J
= 25
o
C, V
GE
= 10V
T
J
= 150
o
C, V
GE
= 10V
600
R
G
= 3Ω, L = 100µH, V
CE
= 480V
500
400
T
J
= 150
o
C, V
GE
= 10V
300
200
100
0
20
40
60
80
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C AND 150
o
C,
V
GE
= 10V AND 15V
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
HGTG40N60B3
Typical Performance Curves
300
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 3Ω, L = 100µH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
250
T
J
= 150
o
C, V
GE
= 10V
200
T
J
= 25
o
C, V
GE
= 15V
150
T
J
= 25
o
C, V
GE
= 15V
100
20
40
60
80
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
20
40
60
80
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
140
T
J
= 150
o
C, V
GE
= 10V AND 15V
(Unless Otherwise Specified)
(Continued)
180
R
G
= 3Ω, L = 100µH, V
CE
= 480V
100
60
T
J
= 25
o
C, V
GE
= 10V AND 15V
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE = <0.5%, V
CE
= 10V
PULSE DURATION = 25µs
160
V
GE
, GATE TO EMITTER VOLTAGE (V)
200
15
I
g(REF)
= 3.255mA, R
L
= 7.5Ω, T
C
= 25
o
C
V
CE
= 400V
V
CE
= 600V
12
120
9
80
6
V
CE
= 200V
3
T
C
= 25
o
C
T
C
= 150
o
C
40
T
C
= -55
o
C
6
7
8
9
10
0
4
5
V
GE
, GATE TO EMITTER VOLTAGE (V)
0
0
50
100
150
200
250
300
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
14
FREQUENCY = 400kHz
12
C
IES
C, CAPACITANCE (nF)
10
8
6
4
C
OES
2
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2004 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B3
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