Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
600
75
63
300
±20
±30
200A at 600V
625
5
-55 to 150
260
UNITS
V
A
A
A
V
V
W
W/
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
T
J
= 25
o
C
T
J
= 125
o
C
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 40A,
V
GE
= 15V
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
20
-
-
-
-
4.5
-
200
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
1.7
1.5
5.6
-
-
8.5
350
450
25
18
145
35
400
850
370
MAX
-
-
250
3.0
2.7
2.0
7
±250
-
-
405
520
-
-
-
-
-
-
-
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
UNITS
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 2.2Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
C
= 40A, V
CE
= 0.5 BV
CES
I
C
= 40A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
= 15V
R
G
= 2.2Ω
L = 200µH
Test Circuit (Figure 20)
4-2
HGTG40N60A4
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 20.
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