MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9180/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
•
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 2 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power –
750 kHz:
–45.0 dBc @ 30 kHz BW
1.98 MHz:
–60.0 dBc @ 30 kHz BW
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW)
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF9180
MRF9180S
880 MHz, 170 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF9180
CASE 375E–03, STYLE 1
NI–1230S
MRF9180S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
388
2.22
–65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.45
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF9180 MRF9180S
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
IMD
700 mA,
IRL
700 mA,
G
ps
—
17.5
—
dB
—
–15
–9
dB
—
–31
–28
dBc
G
ps
16
17.5
—
dB
C
oss
C
rss
—
—
77
3.8
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.9
3.7
0.19
6
4
—
0.5
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
η
35
39
—
%
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, CW, I
DQ
= 2
700 mA,
f1 = 880.0 MHz)
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
700 mA,
η
—
38.5
—
%
IMD
700 mA,
IRL
700 mA,
P
1dB
—
–31
—
dBc
—
–13
—
dB
—
170
—
W
MRF9180 MRF9180S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) (continued)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W CW, I
DQ
= 2
f1 = 880.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W CW, I
DQ
= 2
f1 = 880.0 MHz)
G
ps
700 mA,
η
700 mA,
Ψ
—
55
—
%
—
16.5
—
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 170 W CW, I
DQ
= 2
700 mA,
f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(2) Device measured in push–pull configuration.
No Degradation In Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S
3
V
GG
+
C13
B2
B4
C14
C16
C22
B6
+
L3
Z22
C20
C10
C17
Z16
DUT
Z17
C9
R2
COAX 3
C26
+
C27
+
C28
V
DD
Z18
R1
COAX 1
Z20
Z24
RF
INPUT Z1
Z6
Z2
L1
Z3
C1
Z4
Z7
Z5
C2
C3
Z8
Z10
C4
C6
Z12
C7
Z13
C5
Z14
C18
L4
Z26
RF
OUTPUT
Z9
Z11
C8
Z15
Z28
Z29
C29
Z27
COAX 2
COAX 4
V
GG
+
C11
B1
B3
C12
Z19
Z21
C15
Z23
C19
L2
B5
C21
+
C23
+
C24
+
C25
Z25
V
DD
B1, B2, B5, B6
B3, B4
C1
C2, C3, C5, C6, C12, C14,
C19, C20, C21, C22
C4, C9, C10, C15, C16
C7
C8
C11, C13
C17
C18
C23, C24, C26, C27
C25, C28
C29
Coax1, Coax2
Coax3, Coax4
L1, L2, L3
L4
R1, R2
Long Ferrite Beads, Surface Mount
Short Ferrite Beads, Surface Mount
0.6–4.5 pF Variable Capacitor
47 pF Chip Capacitors, B Case
12 pF Chip Capacitors, B Case
0.8–9.1 pF Variable Capacitor
7.5 pF Chip Capacitor, B Case
10
µF,
35 V Tantalum Surface Mount Chip Capacitors
3.6 pF Chip Capacitor, B Case
5.1 pF Chip Capacitor, B Case
22
µF,
35 V Tantalum Surface Mount Chip Capacitors
220
µF,
50 V Electrolytic Capacitors
0.4–2.5 pF Variable Capacitor
25
Ω,
Semi Rigid Coax, 70 mil OD, 1.05″ Long
50
Ω,
Semi Rigid Coax, 85 mil OD, 1.05″ Long
18.5 nH Mini Spring Inductors, Coilcraft
12.5 nH Mini Spring Inductor, Coilcraft
510
Ω,
1/10 W Chip Resistors
Z1
Z2
Z3
Z4, Z5, Z26, Z27
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z28
Z29
Board
Material
0.420″ x 0.080″ Microstrip
0.190″ x 0.080″ Microstrip
0.097″ x 0.080″ Microstrip
2.170″ x 0.080″ Microstrip
0.075″ x 0.080″ Microstrip
0.088″ x 0.220″ Microstrip
0.088″ x 0.220″ Microstrip
0.460″ x 0.220″ Microstrip
0.685″ x 0.625″ Microstrip
0.055″ x 0.625″ Microstrip
0.055″ x 0.632″ Microstrip
0.685″ x 0.632″ Microstrip
0.732″ x 0.080″ Microstrip
0.060″ x 0.080″ Microstrip
0.230″ x 0.080″ Microstrip
0.460″ x 0.080″ Microstrip
30 mil Teflon
,
εr
= 2.55,
Copper Clad, 2 oz Cu
Figure 1. 880 MHz Broadband Test Circuit Schematic
MRF9180 MRF9180S
4
MOTOROLA RF DEVICE DATA
C13
V
GG
B2
B4
MRF9180
900MHz
PUSH PULL
Rev 01
B6
C26 C27
C28
V
DD
C14
R1
L1
C3
C4
CUT OUT AREA
C6
C5
C7
R2
C12
Resistor
Resistor
C22
C10
C16
L3
C20
C18
C19
L4
C29
C8
C17
C1
C2
C9
C15
L2
C21
C11
V
GG
B1
B3
B5
C25
C23 C24
V
DD
Figure 2. 880 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S
5
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