GaAs MULTIPLIER DIODES
TM
®
ISIS Frequency Multiplier
MIV41001 – MIV41013
Features
●
●
●
●
●
High Output Powers — Over 5 W at 35 GHz
High Efficiency
2 and 3 Stack Options
High Cut-Off Frequency
Low Thermal Resistance
Applications
●
●
●
●
Frequency Multipliers to Beyond 110 GHz
High-Power mmW Transceivers
mmW Phase Arrays
Drivers for mm Power Amplifiers
Description
Microsemi’s ISIS frequency multiplier varactors are
fabricated by epitaxially stacking the P-N junctions in
GaAs to obtain high power at millimeter wave
frequencies. The MIV series of ISIS multiplier diodes
has been designed to have the high cut-off frequency to
produce very low conversion loss when used in
appropriately designed circuits. MSC offers 2 and 3
stacked devices to produce high CW power from 40–
110 GHz. CW power up to 3 W at 44 GHz
(conversion loss <3 dB) and 1 W in W band
(conversion loss <9 dB) are realizable with single
devices. ISIS diodes are offered in the low parasitic
(<10 fF), low thermal resistance M29 package and in
other packages.
ISIS Diode Schematic (2 Stack)
ohmic metal
P+ Layer
N Layer
N+ Layer
P+ Layer
N Layer
N+ Layer
Substrate
ohmic metal
Specifications @ 25°C
2 Stack ISIS Diodes —
Breakdown Voltage: 55 V Min.
Part
Number
MIV41001-21
MIV41002-21
MIV41003-21
MIV41001-29
MIV41002-29
MIV41003-29
Junction
Capacitance
@ Zero Bias
(pF)
0.1–0.3
0.3–0.5
0.5–1.0
0.1–0.3
0.3–0.5
0.5–1.0
Min.
6 V Cut-Off
Frequency
(GHz)
1000
700
600
1000
700
600
Typ.
Package
Capacitance
(pF)
0.15
0.15
0.15
0.10
0.10
0.10
3 Stack ISIS Diodes —
Breakdown Voltage: 75 V Min.
Part
Number
MIV41011-21
MIV41012-21
MIV41013-21
MIV41011-29
MIV41012-29
MIV41013-29
Junction
Capacitance
@ Zero Bias
(pF)
0.1–0.3
0.3–0.5
0.5–1.0
0.1–0.3
0.3–0.5
0.5–1.0
Min.
6 V Cut-Off
Frequency
(GHz)
1000
700
600
1000
700
600
Typ.
Package
Capacitance
(pF)
0.15
0.15
0.15
0.10
0.10
0.10
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
Other package styles are available on request.
.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
