GUNN Diodes
TM
®
Cathode Heat Sink
MG1001 – MG1061
Discrete Frequency: Cathode Heatsink
Features
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●
●
CW Designs to 500 mW
Pulsed Designs to 10 W
Frequency Coverage Specified from 5.9–95 GHz
Low Phase Noise
High Reliability
Applications
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Motion Detectors
Transmitters and Receivers
Beacons
Automotive Collision Avoidance Radars
Radars
Radiometers
Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
TM
®
Cathode Heat Sink
MG1001 – MG1061
(Discrete Frequency: Cathode Heatsink)
C Band Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1001-11
MG1002-11
MG1003-15
MG1004-15
Operating
Frequency
1
(GHz)
5.9–8.2
5.9–8.2
5.9–8.2
5.9–8.2
Min.
Power
2
(mW)
50
100
250
500
Typ.
Operating
Voltage (V)
12
12
12
12
Operating Current
Min.
(mA)
200
300
600
900
Max.
(mA)
400
600
1100
1300
Package
Outline
3
M11
M11
M15
M15
X Band Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1005-11
MG1006-11
MG1007-15
MG1008-15
Operating
Frequency
1
(GHz)
8.2–12.0
8.2–12.0
8.2–12.0
8.2–12.0
Min.
Power
2
(mW)
50
100
250
500
Typ.
Operating
Voltage (V)
10
10
10
10
Operating Current
Min.
(mA)
200
400
700
1000
Max.
(mA)
400
700
1200
1600
Package
Outline
3
M11
M11
M15
M15
Ku Band Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1009-11
MG1010-11
MG1011-15
MG1012-15
Operating
Frequency
1
(GHz)
12.4–18.0
12.4–18.0
12.4–18.0
12.4–18.0
Min.
Power
2
(mW)
50
100
250
500
Typ.
Operating
Voltage (V)
8
8
8
8
Operating Current
Min.
(mA)
300
400
800
1100
Max.
(mA)
500
800
1200
1700
Package
Outline
3
M11
M11
M15
M15
K Band Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1013-16
MG1014-16
MG1015-16
MG1016-17
1
Operating
Frequency
1
(GHz)
18.0–26.5
18.0–26.5
18.0–26.5
18.0–23.0
Min.
Power
2
(mW)
50
100
200
400
Typ.
Operating
Voltage (V)
6
6
6
6
Operating Current
Min.
(mA)
400
500
800
900
Max.
(mA)
600
1000
1400
1700
Package
Outline
3
M16
M16
M16
M17
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
2
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ.
3
Polarity: anode is the cap and cathode is the heatsink.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
TM
®
Cathode Heat Sink
MG1001 – MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Ka Band Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1017-16
MG1018-16
MG1019-16
MG1020-16
MG1039-16
MG1040-16
Operating
Frequency
1
(GHz)
26.5–40.0
26.5–40.0
26.5–40.0
26.5–40.0
26.5–35.0
26.5–35.0
Min.
Power
2
(mW)
50
100
200
250
300
350
Typ.
Operating
Voltage (V)
4.5
4.5
5.0
5.5
5.5
5.5
Operating Current
Min.
(mA)
300
600
800
800
1000
1000
Max.
(mA)
700
1100
1400
1600
1700
1800
Package
Outline
3
M16
M16
M16
M16
M16
M16
U Band Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1021-16
MG1022-16
MG1023-16
Operating
Frequency
1
(GHz)
40.0–60.0
40.0–60.0
40.0–50.0
Min.
Power
2
(mW)
50
100
150
Typ.
Operating
Voltage (V)
4
4
4
Operating Current
Min.
(mA)
400
700
800
Max.
(mA)
800
1200
1600
Package
Outline
3
M16
M16
M16
V and W Band Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1036-16
MG1037-16
MG1024-16
MG1025-16
MG1038-16
Operating
Frequency
1
(GHz)
60.5–85.0
60.5–85.0
85–95
85–95
85–95
Min.
Power
2
(mW)
10
50
10
20
50
Typ.
Operating
Voltage (V)
4.5
5
4.5
4.5
5
Operating Current
Min.
(mA)
400
500
450
500
450
Max.
(mA)
900
1100
1100
1000
1200
Package
Outline
3
M16
M16
M16
M16
M16
High Power Pulsed Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1034-15
Operating
Frequency
1
(GHz)
9.3
Min.
Power
2
(mW)
5
Typ.
Operating
Voltage (V)
35
Typ.
Operating Current
(Amps.)
8
Package
Outline
3
M15
Stacked Pulsed Gunn Diodes (Specifications @ 25°C)
Part
Number
MG1060-15
1
Operating
Frequency
1
(GHz)
9.3
Min.
Power
2
(Watts)
10
Typ.
Operating
Voltage (V)
70
Typ.
Operating Current
(Amps)
6
Number
of Stacks
2
Package
Outline
3
M15
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
2
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ.
3
Polarity: anode is the cap and cathode is the heatsink.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
Page 3
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GUNN Diodes
TM
®
Cathode Heat Sink
MG1001 – MG1061
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Typical Characteristics
1.0
300
-50°C
Power Output (mW)
0.8
Ratio
250
200
90°C
150
100
0
2
4
6
8
10
12
0.6
0.4
0.2
0
0
1
2
3
I
Threshold
I
Bias
V
Bias
V
Threshold
Ratio
Bias Voltage (V)
Power Output vs. Bias Voltage
I
Bias
Ratio vs. V
Bias
Ratio
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
Page 4
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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