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HB54A5129F1-A75B: 产品描述DDR DRAM Module, 64MX4, CMOS, GOLD CONTACTS, DIMM-184; 产品类别存储存储; 文件大小149KB，共18页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HB54A5129F1-A75B概述

DDR DRAM Module, 64MX4, CMOS, GOLD CONTACTS, DIMM-184

HB54A5129F1-A75B规格参数

参数名称	属性值
厂商名称	Hitachi （Renesas ）
零件包装代码	DIMM
包装说明	DIMM,
针数	184
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	SINGLE BANK PAGE BURST
其他特性	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
JESD-30 代码	R-XDMA-N184
长度	133.35 mm
内存密度	268435456 bit
内存集成电路类型	DDR DRAM MODULE
内存宽度	4
功能数量	1
端口数量	1
端子数量	184
字数	67108864 words
字数代码	64000000
工作模式	SYNCHRONOUS
最高工作温度	55 °C
最低工作温度
组织	64MX4
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
座面最大高度	43.18 mm
自我刷新	YES
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL
宽度	4 mm

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HB54A5129F1-A75B/B75B/10B

512 MB Registered DDR SDRAM DIMM

64-Mword

72-bit, 1-Bank Module

(18 pcs of 64 M

4 Components)

E0090H20 (Ver. 2.0)

Preliminary

Mar. 30, 2001

Description

The HB54A5129F1 is a 64M

1-bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces

of 256-Mbit DDR SDRAM (HM5425401BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2

pieces of register driver and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). Read

and write operations are performed at the cross points of the CK and the

CK.

This high speed data transfer is

realized by the 2-bit prefetch piplined architecture. Data strobe (DQS) both for read and write are available

for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked

Loop (DLL) can be set enable or disable. An outline of the products is 184-pin socket type package (dual

lead out). Therefore, it makes high density mounting possible without surface mount technology. It provides

common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module

board.

Features

•

184-pin socket type package (dual lead out)



Outline: 133.35 mm (Length)

43.18 mm (Height)

4.00 mm (Thickness)



Lead pitch: 1.27 mm

•

2.5 V power supply (V

CCQ

)

•

SSTL-2 interface for all inputs and outputs

Clock frequency: 143 MHz/133 MHz/125 MHz (max)

Data inputs and outputs are synchronized with DQS

4 banks can operate simultaneously and independently (Component)

Burst read/write operation

Programmable burst length: 2/4/8



Burst read stop capability

Preliminary: The specifications of this device are subject to change without notice. Please contact your

nearest Elpida Memory, Inc. regarding specifications.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

HB54A5129F1-A75B相似产品对比

	HB54A5129F1-A75B	HB54A5129F1-10B	HB54A5129F1-B75B
描述	DDR DRAM Module, 64MX4, CMOS, GOLD CONTACTS, DIMM-184	DDR DRAM Module, 64MX4, CMOS, GOLD CONTACTS, DIMM-184	DDR DRAM Module, 64MX4, CMOS, GOLD CONTACTS, DIMM-184
厂商名称	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
零件包装代码	DIMM	DIMM	DIMM
包装说明	DIMM,	DIMM,	DIMM,
针数	184	184	184
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
其他特性	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
JESD-30 代码	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
长度	133.35 mm	133.35 mm	133.35 mm
内存密度	268435456 bit	268435456 bit	268435456 bit
内存集成电路类型	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
内存宽度	4	4	4
功能数量	1	1	1
端口数量	1	1	1
端子数量	184	184	184
字数	67108864 words	67108864 words	67108864 words
字数代码	64000000	64000000	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	55 °C	55 °C	55 °C
组织	64MX4	64MX4	64MX4
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified
座面最大高度	43.18 mm	43.18 mm	43.18 mm
自我刷新	YES	YES	YES
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V
表面贴装	NO	NO	NO
技术	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL
宽度	4 mm	4 mm	4 mm

HB54A5129F1-A75B

HB54A5129F1-A75B概述

HB54A5129F1-A75B规格参数

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