MJD45H11
29 July 2019
80 V, 8 A PNP high power bipolar transistor
Product data sheet
1. General description
PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic
package.
NPN complement: MJD44H11
2. Features and benefits
•
•
•
•
•
High thermal power dissipation capability
High energy efficiency due to less heat generation
Electrically similar to popular MJD45H series
Low collector emitter saturation voltage
Fast switching speeds
3. Applications
•
•
•
•
•
•
Power management
Load switch
Linear mode voltage regulator
Constant current drive backlighting application
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V
CEO
I
C
I
CM
h
FE
collector-emitter
voltage
collector current
peak collector current
DC current gain
single pulse; t
p
≤ 1 ms
V
CE
= -1 V; I
C
= -2 A; T
amb
= 25 °C
Conditions
open base
Min
-
-
-
60
Typ
-
-
-
-
Max
-80
-8
-16
-
Unit
V
A
A
Nexperia
MJD45H11
80 V, 8 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
B
C
E
C
base
collector
emitter
mounting base; connected
to collector
1
2
3
Simplified outline
mb
Graphic symbol
E
B
C; mb
aaa-029523
DPAK (SOT428)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
MJD45H11
DPAK
Description
Version
plastic, single-ended surface-mounted package (DPAK); 3 leads; SOT428
2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body
7. Marking
Table 4. Marking codes
Type number
MJD45H11
Marking code
MJD45H11
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open base
open collector
single pulse; t
p
≤ 1 ms
T
mb
≤ 25 °C
T
amb
≤ 25 °C
[1]
[2]
Min
-
-
-
-
-
-
-
-55
-65
Max
-80
-6
-8
-16
20
1.75
150
150
150
Unit
V
V
A
A
W
W
°C
°C
°C
Total power dissipation junction to mounting base.
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm .
MJD45H11
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
2 / 12
Nexperia
MJD45H11
80 V, 8 A PNP high power bipolar transistor
2.0
P
tot
(W)
1.5
aaa-029825
1.0
0.5
0
-50
0
50
100
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
Fig. 1.
Power derating curves SOT428
150
200
T
amb
(°C)
2
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
R
th(j-mb)
Conditions
Min
-
Typ
-
Max
6.25
Unit
K/W
thermal resistance from in free air
junction to mounting
base
thermal resistance from
junction to ambient
[1]
R
th(j-a)
[1]
-
-
72
2
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm .
10
2
Z
th(j-a)
(K/W)
10
aaa-029826
duty cycle = 1
0.50
0.25
0.10
0.05
0.02
0.01
0.75
0.33
0.20
1
0
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
MJD45H11
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
3 / 12
Nexperia
MJD45H11
80 V, 8 A PNP high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
t
on
t
s
t
f
t
off
C
c
f
T
Conditions
Min
-
-
-
60
40
-
-
-
-
-
-
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
CE
= -10 V; I
C
= -500 mA; f = 100 MHz;
T
amb
= 25 °C
aaa-029837
Typ
-
-
-
-
-
-
-
225
280
100
380
80
80
Max
-1
-50
-1
-
-
-1
-1.5
-
-
-
-
-
-
Unit
µA
µA
µA
collector-emitter cut-off V
CE
= -64 V; V
BE
= 0 V; T
amb
= 25 °C
current
V
CE
= -64 V; V
BE
= 0 V; T
j
= 150 °C
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= -1 V; I
C
= -2 A; T
amb
= 25 °C
V
CE
= -1 V; I
C
= -4 A; T
amb
= 25 °C
I
C
= -8 A; I
B
= -400 mA; T
amb
= 25 °C
V
V
ns
ns
ns
ns
pF
MHz
base-emitter saturation I
C
= -8 A; I
B
= -800 mA; T
amb
= 25 °C
voltage
turn-on time
storage time
fall time
turn-off time
collector capacitance
transition frequency
I
C
= -5 A; I
Bon
= -0.5 A; I
Boff
= 0.5 A;
V
CC
= -12.5 V; T
amb
= 25 °C
-
-
600
h
FE
-8
I
C
(A)
-6
I
B
(mA) = -80
aaa-029838
-70
-60
-50
-40
-30
400
-4
200
-2
-20
-15
-10
-5
0
-10
-10
2
-10
3
I
C
(mA)
-10
4
0
0
-1
-2
-3
-4
V
CE
(V)
-5
V
CE
= -1 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 3.
DC current gain as a function of collector
current; typical values
T
amb
= 25 °C
Fig. 4.
Collector current as a function of collector-
emitter voltage; typical values
MJD45H11
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
4 / 12
Nexperia
MJD45H11
80 V, 8 A PNP high power bipolar transistor
aaa-029839
-1.2
V
BE
(V)
-0.8
(1)
(2)
-1.2
V
BEsat
(V)
(1)
aaa-029840
-0.8
(2)
(3)
-0.4
(3)
-0.4
0
-1
-10
-10
2
-10
3
I
C
(mA)
-10
4
0
-1
-10
-10
2
-10
3
I
C
(mA)
-10
4
V
CE
= -5 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 5.
Base-emitter voltage as a function of collector
current; typical values
-1
V
CEsat
(V)
-10
-1
aaa-029841
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6.
Base-emitter saturation voltage as a function of
collector current; typical values
aaa-029842
-2.0
V
CEsat
(V)
-1.5
(3)
(2)
(1)
-1.0
-10
-2
-0.5
(1)
(2)
(3)
(4)
(5)
-10
-3
-1
-10
-10
2
-10
3
I
C
(mA)
-10
4
0
-10
-1
-1
-10
-10
2
I
B
(mA)
-10
3
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 7.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 8.
(1) I
C
= -100 mA
(2) I
C
= -500 mA
(3) I
C
= -1000 mA
(4) I
C
= -3000 mA
(5) I
C
= -8000 mA
Collector-emitter saturation region as a function
of base current; typical values
MJD45H11
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
5 / 12
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