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GS832018AGT-333IVT

产品描述Cache SRAM, 2MX18, 5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
产品类别存储    存储   
文件大小330KB,共22页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
下载文档 详细参数 全文预览

GS832018AGT-333IVT概述

Cache SRAM, 2MX18, 5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

GS832018AGT-333IVT规格参数

参数名称属性值
厂商名称GSI Technology
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间5 ns
其他特性FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V
JESD-30 代码R-PQFP-G100
长度20 mm
内存密度37748736 bit
内存集成电路类型CACHE SRAM
内存宽度18
功能数量1
端子数量100
字数2097152 words
字数代码2000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2MX18
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
座面最大高度1.6 mm
最大供电电压 (Vsup)2 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
宽度14 mm

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GS832018/32/36AGT-xxxV
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• RoHS-compliant 100-lead TQFP package available
2M x 18, 1M x 32, 1M x 36
36Mb Sync Burst SRAMs
333 MHz–150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS832018/32/36AGT-xxxV operates on a 1.8 V power
supply. All input are 1.8 V compatible. Separate output power
(V
DDQ
) pins are used to decouple output noise from the
internal circuits and are 1.8 V compatible.
Functional Description
Applications
The GS832018/32/36AGT-xxxV is a 37,748,736-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip
set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-333
2.5
3.3
365
425
4.5
4.5
270
315
-250
2.5
4.0
290
345
5.5
5.5
245
280
-200
3.0
5.0
250
290
6.5
6.5
210
250
-150
3.8
6.7
215
240
7.5
7.5
200
230
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 8/2013
1/22
© 2011, GSI Technology
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