Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD433
█ APPLICATIONS
Medium Power Linear switching Applications
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
－55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 36W
V
CBO
——Collector-Base
Voltage…………………………… 22V
V
CEO
——
Collector-Emitter Voltage………………………… 22V
V
CES
——Collector-Emitter
Voltage
…………………………
22V
V
EBO
——Emitter-Base
Voltage………………………………… 5V
1―
Emitter, E
2―Collector，C
3―Base，B
I
C
——Collector
Current Pulse）………………………………… 7A
（
C
——Collector
Current DC）
I
（
……………………………………
4A
I
B
——Base
Current………………………………………………1A
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
I
CES
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
４０
８５
５０
２２
３
１３０
１４０
１００ μＡ
V
CB
=22V, I
E
=0
１
１．１
½Ａ
V
EB
=5V, I
C
=0
Ｖ
Ｖ
Ｖ
V
CE
=5V, I
C
=10mA
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=1V, I
C
=2A
I
C
=100mA, I
B
=0
１００ μＡ
V
CE
=22V, V
EB
=0
*H
FE（1）
DC Current Gain
*H
FE（2）
DC Current Gain
*H
FE（3）
DC Current Gain
*V
CE(sat)
Collector- Emitter Saturation Voltage
*V
BE(on)
V
CEO(sus)
f
t
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Current Gain-Bandwidth Product
０．２ ０．５
ＭＨ½
V
CE
=1V, I
C
=250mA,
* Ｐ½½½½ Ｔ½½½：ＰＷ＝３００μＳ，Ｄ½½½ Ｃ½½½½＝１．５％ Ｐ½½½½½
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